Embodiments of the invention provide a high voltage transfer circuit, a row decoder circuit comprising the high voltage transfer circuit, and a non-volatile semiconductor memory device comprising the high voltage transfer circuit. In one embodiment, the invention provides a high voltage transfer circuit of a semiconductor memory device comprising a high voltage switch comprising a high voltage transistor comprising a first terminal connected to a boosted voltage via a first depletion-type transistor and comprising a second terminal connected to an output node via a second depletion-type transistor. The high voltage transfer circuit further comprises a driver circuit adapted to drive the first and second depletion-type transistors and the high voltage transistor in response to an input signal.