利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

29 条记录 (耗时 0.024 秒)

    High voltage transfer circuit and row decoder circuit comprising a high voltage transfer circuit
    1.
    发明申请
    High voltage transfer circuit and row decoder circuit comprising a high voltage transfer circuit 有权
    高电压传输电路和行解码电路包括高电压传输电路

    公开(公告)号：US20070268774A1

    公开(公告)日：2007-11-22

    申请号：US11634061

    申请日：2006-12-06

    申请人： Jong-Hoon Lee ,  Yong-Taek Jeong ,  Jin-Kook Kim

    发明人： Jong-Hoon Lee ,  Yong-Taek Jeong ,  Jin-Kook Kim

    IPC分类号： G11C8/00 ,  G11C11/34 ,  G11C16/06

    CPC分类号： G11C8/08 ,  G11C11/419 ,  G11C16/08 ,  G11C16/12

    摘要： Embodiments of the invention provide a high voltage transfer circuit, a row decoder circuit comprising the high voltage transfer circuit, and a non-volatile semiconductor memory device comprising the high voltage transfer circuit. In one embodiment, the invention provides a high voltage transfer circuit of a semiconductor memory device comprising a high voltage switch comprising a high voltage transistor comprising a first terminal connected to a boosted voltage via a first depletion-type transistor and comprising a second terminal connected to an output node via a second depletion-type transistor. The high voltage transfer circuit further comprises a driver circuit adapted to drive the first and second depletion-type transistors and the high voltage transistor in response to an input signal.

    摘要翻译： 本发明的实施例提供一种高电压传输电路，包括高压传输电路的行解码器电路和包括高电压传输电路的非易失性半导体存储器件。 在一个实施例中，本发明提供了一种半导体存储器件的高电压传输电路，其包括高压开关，其包括高压晶体管，该高压晶体管包括经由第一耗尽型晶体管连接到升压电压的第一端子，并且包括连接到 经由第二耗尽型晶体管的输出节点。 高电压传输电路还包括适于响应于输入信号驱动第一和第二耗尽型晶体管和高压晶体管的驱动器电路。

    High voltage transfer circuit and row decoder circuit comprising a high voltage transfer circuit
    2.
    发明授权
    High voltage transfer circuit and row decoder circuit comprising a high voltage transfer circuit 有权
    高电压传输电路和行解码电路包括高电压传输电路

    公开(公告)号：US07515503B2

    公开(公告)日：2009-04-07

    申请号：US11634061

    申请日：2006-12-06

    申请人： Jong-Hoon Lee ,  Yong-Taek Jeong ,  Jin-Kook Kim

    发明人： Jong-Hoon Lee ,  Yong-Taek Jeong ,  Jin-Kook Kim

    IPC分类号： G11C8/00

    CPC分类号： G11C8/08 ,  G11C11/419 ,  G11C16/08 ,  G11C16/12

    摘要： Embodiments of the invention provide a high voltage transfer circuit, a row decoder circuit comprising the high voltage transfer circuit, and a non-volatile semiconductor memory device comprising the high voltage transfer circuit. In one embodiment, the invention provides a high voltage transfer circuit of a semiconductor memory device comprising a high voltage switch comprising a high voltage transistor comprising a first terminal connected to a boosted voltage via a first depletion-type transistor and comprising a second terminal connected to an output node via a second depletion-type transistor. The high voltage transfer circuit further comprises a driver circuit adapted to drive the first and second depletion-type transistors and the high voltage transistor in response to an input signal.

    摘要翻译： 本发明的实施例提供一种高电压传输电路，包括高压传输电路的行解码器电路和包括高电压传输电路的非易失性半导体存储器件。 在一个实施例中，本发明提供了一种半导体存储器件的高电压传输电路，其包括高压开关，其包括高压晶体管，该高压晶体管包括经由第一耗尽型晶体管连接到升压电压的第一端子，并且包括连接到 经由第二耗尽型晶体管的输出节点。 高电压传输电路还包括适于响应于输入信号驱动第一和第二耗尽型晶体管和高压晶体管的驱动器电路。

    Flash memory device and word line enable method thereof
    3.
    发明授权
    Flash memory device and word line enable method thereof 有权
    闪存装置及其字线使能方法

    公开(公告)号：US07545680B2

    公开(公告)日：2009-06-09

    申请号：US11599434

    申请日：2006-11-15

    申请人： Jin-Kook Kim ,  Jin-Yub Lee

    发明人： Jin-Kook Kim ,  Jin-Yub Lee

    IPC分类号： G11C16/04

    CPC分类号： G11C8/08 ,  G11C8/10 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/30

    摘要： In one aspect, a word line enable method in a flash memory device includes driving a signal line corresponding to a selected word line with a word line voltage, and stepwise increasing a gate voltage of a switch transistor connected between the selected word line and the signal line during a program execute period.

    摘要翻译： 一方面，闪速存储装置中的字线使能方法包括用字线电压驱动与选定字线对应的信号线，并且逐步增加连接在选定字线与信号之间的开关晶体管的栅极电压 在程序执行期间。

    RECIPROCATING COMPRESSOR AND REFRIGERATING APPARATUS HAVING THE SAME
    5.
    发明申请
    RECIPROCATING COMPRESSOR AND REFRIGERATING APPARATUS HAVING THE SAME 审中-公开
    再生压缩机和制冷装置

    公开(公告)号：US20110265510A1

    公开(公告)日：2011-11-03

    申请号：US13143503

    申请日：2009-12-07

    申请人： Jin-Kook Kim ,  Kyeong-Ho Kim ,  Young-Hwan Kim ,  Kyoung-Jun Park

    发明人： Jin-Kook Kim ,  Kyeong-Ho Kim ,  Young-Hwan Kim ,  Kyoung-Jun Park

    IPC分类号： F25B1/00 ,  F04B19/22

    CPC分类号： F04B27/0404 ,  F04B27/0423 ,  F04B39/0246

    摘要： Disclosed are a reciprocating compressor and a refrigerating apparatus having the same, a ball bearing (300) can be easily stably installed between thrust surfaces (213, 227) of a cylinder block (210) and a crank shaft (220) so as to enhance efficiency of the compressor. Also, a ball bearing (300) can be installed by being inserted into thrust surfaces (213, 227) so to shorten a moment arm that much, thereby decreasing a frictional loss at a journal bearing surface (215), resulting in an energy efficiency of the reciprocating compressor and the refrigerating apparatus having the same. In addition, as an oil hole (226c) of the crank shaft (220) is veiled by the journal bearing surface (215) of the cylinder block (210), even if a ball bearing (300) is employed, oil leaked between the thrust surfaces (213, 227) can be reduced, thereby further enhancing the efficiency of the compressor and the refrigerating apparatus having the same.

    摘要翻译： 公开了一种往复式压缩机和具有该往复式压缩机的制冷装置，可以容易地将滚珠轴承（300）稳定地安装在气缸体（210）的推力面（213,227）和曲轴（220）之间，以便增强 压缩机的效率。 此外，球轴承（300）可以通过插入到推力表面（213,227）中来安装，从而缩短力矩臂，从而减小轴颈轴承表面（215）处的摩擦损失，导致能量效率 的往复式压缩机和具有该往复式压缩机的制冷装置。 此外，由于曲轴（220）的油孔（226c）被气缸体（210）的轴颈轴承面（215）遮盖，所以即使采用滚珠轴承（300），油也在 可以减小推力面（213,227），从而进一步提高压缩机及其制冷装置的效率。

    Capacity variable type twin rotary compressor and driving method thereof
    7.
    发明授权
    Capacity variable type twin rotary compressor and driving method thereof 失效
    容量可变式双旋转压缩机及其驱动方法

    公开(公告)号：US07976287B2

    公开(公告)日：2011-07-12

    申请号：US11659719

    申请日：2005-08-09

    申请人： Seon-Woong Hwang ,  Seong-Jae Hong ,  Kyoung-Jun Park ,  Jin-Kook Kim ,  Ji-Young Bae

    发明人： Seon-Woong Hwang ,  Seong-Jae Hong ,  Kyoung-Jun Park ,  Jin-Kook Kim ,  Ji-Young Bae

    IPC分类号： F04B49/00

    CPC分类号： F04C23/001 ,  F01C21/0818 ,  F01C21/0845 ,  F01C21/0863 ,  F04C18/3564 ,  F04C23/008

    摘要： A capacity variable type twin rotary compressor may include a casing, a motor, a first cylinder having a first compression space, a second cylinder fixed to one side of the first cylinder and having a second compression space, first and second intakes respectively formed in the first and second cylinders and each connected to a gas intake pipe, first and second vane slits respectively formed in the first and second intakes first and second rolling pistons eccentrically coupled to the motor and respectively housed in the first and second compression spaces, first and second vanes slidingly received in the first and second vane slits, respectively, an expansion groove formed at the second vane slit separate from the inner space of the casing, and refrigerant switching valves that allow refrigerant of intake and discharge pressures to be supplied into the second compression space and the expansion groove, such that the second vane contacts the second rolling piston to perform a power driving or separates therefrom to perform a saving driving.

    摘要翻译： 容量可变型双旋转压缩机可以包括壳体，电动机，具有第一压缩空间的第一气缸，固定到第一气缸的一侧并具有第二压缩空间的第二气缸，分别形成在第一气缸中的第一和第二进气口 第一和第二气缸，并且各自连接到进气管，分别形成在第一和第二入口中的第一和第二叶片狭缝第一和第二滚动活塞，偏心地联接到马达并且分别容纳在第一和第二压缩空间中，第一和第二 分别滑动地容纳在第一和第二叶片狭缝中的叶片，形成在与壳体的内部空间分离的第二叶片狭缝处的膨胀槽，以及允许进入和排出压力的制冷剂被供应到第二压缩的制冷剂切换阀 空间和膨胀槽，使得第二叶片接触第二滚动活塞以执行动力驱动 或进行保存驱动。

    Methods/circuits for programming flash memory devices using overlapping bit line setup and word line enable intervals
    9.
    发明申请
    Methods/circuits for programming flash memory devices using overlapping bit line setup and word line enable intervals 有权
    用于使用重叠位线设置和字线使能间隔编程闪存设备的方法/电路

    公开(公告)号：US20070019474A1

    公开(公告)日：2007-01-25

    申请号：US11480236

    申请日：2006-06-30

    申请人： Jin-Kook Kim ,  Jin-Yub Lee

    发明人： Jin-Kook Kim ,  Jin-Yub Lee

    IPC分类号： G11C16/04

    CPC分类号： G11C16/10 ,  G11C16/0483

    摘要： A method of programming a flash memory device includes charging selection lines with a first voltage while applying program data to bit lines to during a bit line setup interval, then activating a block word line to electrically connect the selection lines to corresponding word lines, and then applying a second voltage, greater than the first voltage, to a selected one of the selection lines. Related devices are also disclosed,

    摘要翻译： 一种对闪速存储器件进行编程的方法包括：在位线建立间隔期间将程序数据应用于位线，然后激活块字线以将选择线电连接到对应的字线，然后将第一电压充电选择线，然后 将大于第一电压的第二电压施加到所选择的选择线之一。 还公开了相关设备，