发明授权
- 专利标题： Real-time parameter tuning using wafer temperature
- 专利标题（中）： 使用晶圆温度进行实时参数调整
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申请号： US11668553申请日： 2007-01-30
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公开(公告)号： US07517708B2公开(公告)日： 2009-04-14
- 发明人: Sachin Deshpande , Merritt Funk
- 申请人： Sachin Deshpande , Merritt Funk
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
The invention can provide a method of processing a wafer using a Real-Time Parameter Tuning (RTPT) procedure to receive an input message that can include a pass-through message, a real-time feedforward message, or a real-time optimization message, or any combination thereof. The RTPT procedures can use real-time wafer temperature data to create, modify, and/or use measurement recipe data, measurement profile data, and/or measurement model data. In addition, RTPT procedures can use real-time wafer temperature data to create, modify, and/or use process recipe data, process profile data, and/or process model data.
公开/授权文献
- US20080182343A1 Real-Time Parameter Tuning Using Wafer Temperature 公开/授权日：2008-07-31
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