Invention Grant
- Patent Title: Real-time parameter tuning using wafer temperature
- Patent Title (中): 使用晶圆温度进行实时参数调整
-
Application No.: US11668553Application Date: 2007-01-30
-
Publication No.: US07517708B2Publication Date: 2009-04-14
- Inventor: Sachin Deshpande , Merritt Funk
- Applicant: Sachin Deshpande , Merritt Funk
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
The invention can provide a method of processing a wafer using a Real-Time Parameter Tuning (RTPT) procedure to receive an input message that can include a pass-through message, a real-time feedforward message, or a real-time optimization message, or any combination thereof. The RTPT procedures can use real-time wafer temperature data to create, modify, and/or use measurement recipe data, measurement profile data, and/or measurement model data. In addition, RTPT procedures can use real-time wafer temperature data to create, modify, and/or use process recipe data, process profile data, and/or process model data.
Public/Granted literature
- US20080182343A1 Real-Time Parameter Tuning Using Wafer Temperature Public/Granted day:2008-07-31
Information query
IPC分类: