发明授权
US07517795B2 Stabilization of Ni monosilicide thin films in CMOS devices using implantation of ions before silicidation
失效
在硅化物中使用离子注入，在CMOS器件中稳定Ni单硅化物薄膜
- 专利标题： Stabilization of Ni monosilicide thin films in CMOS devices using implantation of ions before silicidation
- 专利标题（中）： 在硅化物中使用离子注入，在CMOS器件中稳定Ni单硅化物薄膜
-
申请号： US11551647申请日： 2006-10-20
-
公开(公告)号： US07517795B2公开(公告)日： 2009-04-14
- 发明人: Roy A. Carruthers , Cedrik Y. Cole , Christophe Detavernier , Christian Lavoie , Kenneth P. Rodbell
- 申请人： Roy A. Carruthers , Cedrik Y. Cole , Christophe Detavernier , Christian Lavoie , Kenneth P. Rodbell
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Robert M. Trepp, Esq.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method for forming a stabilized metal silicide film, e.g., contact (source/drain or gate), that does not substantially agglomerate during subsequent thermal treatments, is provided In the present invention, ions that are capable of attaching to defects within the Si-containing layer are implanted into the Si-containing layer prior to formation of metal silicide. The implanted ions stabilize the film, because the implants were found to substantially prevent agglomeration or at least delay agglomeration to much higher temperatures than in cases in which no implants were used.
公开/授权文献
信息查询
IPC分类:
