公开(公告)号：US07517795B2

公开(公告)日：2009-04-14

申请号：US11551647

申请日：2006-10-20

申请人： Roy A. Carruthers ,  Cedrik Y. Cole ,  Christophe Detavernier ,  Christian Lavoie ,  Kenneth P. Rodbell

发明人： Roy A. Carruthers ,  Cedrik Y. Cole ,  Christophe Detavernier ,  Christian Lavoie ,  Kenneth P. Rodbell

IPC分类号： H01L21/44

CPC分类号： H01L21/28052 ,  H01L21/28518 ,  H01L29/665

摘要： A method for forming a stabilized metal silicide film, e.g., contact (source/drain or gate), that does not substantially agglomerate during subsequent thermal treatments, is provided In the present invention, ions that are capable of attaching to defects within the Si-containing layer are implanted into the Si-containing layer prior to formation of metal silicide. The implanted ions stabilize the film, because the implants were found to substantially prevent agglomeration or at least delay agglomeration to much higher temperatures than in cases in which no implants were used.

摘要翻译： 在后续热处理中，形成稳定的金属硅化物膜例如接触（源极/漏极或栅极）的方法基本上不附着在本发明中，能够附着在Si- 在形成金属硅化物之前，将含硅层注入到含Si层中。 植入的离子稳定膜，因为发现植入物基本上防止结块或至少延迟聚集到比没有使用植入物的情况下更高的温度。