发明授权
- 专利标题： Photo diode and related method for fabrication
- 专利标题（中）： 光电二极管及相关制造方法
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申请号： US11379228申请日： 2006-04-19
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公开(公告)号： US07518171B2公开(公告)日： 2009-04-14
- 发明人: Jhy-Jyi Sze , Ming-Yi Wang , Junbo Chen
- 申请人： Jhy-Jyi Sze , Ming-Yi Wang , Junbo Chen
- 申请人地址： TW Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu
- 主分类号： H01L31/062
- IPC分类号： H01L31/062 ; H01L31/113
摘要：
A method for fabricating a photo diode first involves providing a substrate. A doping area is then formed on the substrate. Afterwards, a dielectric layer, and a first poly-silicon layer are formed on the substrate. An opening is then formed to expose a surface of the doping area. A second poly-silicon layer is formed on the first poly-silicon layer and within the opening. The second poly-silicon layer is patterned to form a wire, while the first poly-silicon layer is patterned to form a gate. Finally, a source/drain is formed.
公开/授权文献
- US20070249077A1 PHOTO DIODE AND RELATED METHOD FOR FABRICATION 公开/授权日：2007-10-25
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