ACTIVE PIXEL SENSOR
    1.
    发明申请
    ACTIVE PIXEL SENSOR 有权
    主动像素传感器

    公开(公告)号:US20060192261A1

    公开(公告)日:2006-08-31

    申请号:US10906581

    申请日:2005-02-25

    IPC分类号: H01L27/14

    摘要: An active pixel sensor is proposed by the invention. The position of the gate of the reset transistor is kept away from the interface of the isolation region and the silicon so that the depletion region does not reach the isolation. Accordingly, dark currents caused by isolation region damages can be avoided.

    摘要翻译: 本发明提出一种有源像素传感器。 复位晶体管的栅极的位置远离隔离区域和硅的界面,使得耗尽区域不能达到隔离。 因此,可以避免由隔离区域损坏引起的暗电流。

    Active pixel sensor
    2.
    发明授权
    Active pixel sensor 有权
    有源像素传感器

    公开(公告)号:US07564083B2

    公开(公告)日:2009-07-21

    申请号:US10906581

    申请日:2005-02-25

    IPC分类号: H01L31/062

    摘要: An active pixel sensor is proposed by the invention. The position of the gate of the reset transistor is kept away from the interface of the isolation region and the silicon so that the depletion region does not reach the isolation. Accordingly, dark currents caused by isolation region damages can be avoided.

    摘要翻译: 本发明提出一种有源像素传感器。 复位晶体管的栅极的位置远离隔离区域和硅的界面,使得耗尽区域不能达到隔离。 因此,可以避免由隔离区域损坏引起的暗电流。

    Photo diode and related method for fabrication
    3.
    发明授权
    Photo diode and related method for fabrication 有权
    光电二极管及相关制造方法

    公开(公告)号:US07518171B2

    公开(公告)日:2009-04-14

    申请号:US11379228

    申请日:2006-04-19

    IPC分类号: H01L31/062 H01L31/113

    摘要: A method for fabricating a photo diode first involves providing a substrate. A doping area is then formed on the substrate. Afterwards, a dielectric layer, and a first poly-silicon layer are formed on the substrate. An opening is then formed to expose a surface of the doping area. A second poly-silicon layer is formed on the first poly-silicon layer and within the opening. The second poly-silicon layer is patterned to form a wire, while the first poly-silicon layer is patterned to form a gate. Finally, a source/drain is formed.

    摘要翻译: 首先制造光电二极管的方法包括提供衬底。 然后在衬底上形成掺杂区域。 之后,在基板上形成电介质层和第一多晶硅层。 然后形成开口以暴露掺杂区域的表面。 在第一多晶硅层上和开口内形成第二多晶硅层。 图案化第二多晶硅层以形成导线,同时将第一多晶硅层图案化以形成栅极。 最后,形成源极/漏极。

    PHOTO DIODE AND RELATED METHOD FOR FABRICATION
    4.
    发明申请
    PHOTO DIODE AND RELATED METHOD FOR FABRICATION 有权
    照相二极管及制造方法

    公开(公告)号:US20070249077A1

    公开(公告)日:2007-10-25

    申请号:US11379228

    申请日:2006-04-19

    IPC分类号: H01L21/00

    摘要: A method for fabricating a photo diode first involves providing a substrate. A doping area is then formed on the substrate. Afterwards, a dielectric layer, and a first poly-silicon layer are formed on the substrate. An opening is then formed to expose a surface of the doping area. A second poly-silicon layer is formed on the first poly-silicon layer and within the opening. The second poly-silicon layer is patterned to form a wire, while the first poly-silicon layer is patterned to form a gate. Finally, a source/drain is formed.

    摘要翻译: 首先制造光电二极管的方法包括提供衬底。 然后在衬底上形成掺杂区域。 之后,在基板上形成电介质层和第一多晶硅层。 然后形成开口以暴露掺杂区域的表面。 在第一多晶硅层上和开口内形成第二多晶硅层。 图案化第二多晶硅层以形成导线,同时将第一多晶硅层图案化以形成栅极。 最后,形成源极/漏极。

    Photo diode and related method for fabrication
    5.
    发明授权
    Photo diode and related method for fabrication 有权
    光电二极管及相关制造方法

    公开(公告)号:US07863082B2

    公开(公告)日:2011-01-04

    申请号:US12393048

    申请日:2009-02-26

    摘要: A method for fabricating a photo diode first involves providing a substrate. A doping area is then formed on the substrate. Afterwards, a dielectric layer, and a first poly-silicon layer are formed on the substrate. An opening is then formed to expose a surface of the doping area. A second poly-silicon layer is formed on the first poly-silicon layer and within the opening. The second poly-silicon layer is patterned to form a wire, while the first poly-silicon layer is patterned to form a gate. Finally, a source/drain is formed.

    摘要翻译: 首先制造光电二极管的方法包括提供衬底。 然后在衬底上形成掺杂区域。 之后,在基板上形成电介质层和第一多晶硅层。 然后形成开口以暴露掺杂区域的表面。 在第一多晶硅层上和开口内形成第二多晶硅层。 图案化第二多晶硅层以形成导线,同时将第一多晶硅层图案化以形成栅极。 最后,形成源极/漏极。

    PHOTO DIODE AND RELATED METHOD FOR FABRICATION
    6.
    发明申请
    PHOTO DIODE AND RELATED METHOD FOR FABRICATION 有权
    照相二极管及制造方法

    公开(公告)号:US20090162971A1

    公开(公告)日:2009-06-25

    申请号:US12393048

    申请日:2009-02-26

    IPC分类号: H01L31/18 H01L21/00

    摘要: A method for fabricating a photo diode first involves providing a substrate. A doping area is then formed on the substrate. Afterwards, a dielectric layer, and a first poly-silicon layer are formed on the substrate. An opening is then formed to expose a surface of the doping area. A second poly-silicon layer is formed on the first poly-silicon layer and within the opening. The second poly-silicon layer is patterned to form a wire, while the first poly-silicon layer is patterned to form a gate. Finally, a source/drain is formed.

    摘要翻译: 首先制造光电二极管的方法包括提供衬底。 然后在衬底上形成掺杂区域。 之后,在基板上形成电介质层和第一多晶硅层。 然后形成开口以暴露掺杂区域的表面。 在第一多晶硅层上和开口内形成第二多晶硅层。 图案化第二多晶硅层以形成导线,同时将第一多晶硅层图案化以形成栅极。 最后,形成源极/漏极。

    Method of manufacturing a self-aligned guard ring of a photo diode
    7.
    发明授权
    Method of manufacturing a self-aligned guard ring of a photo diode 失效
    制造光电二极管的自对准保护环的方法

    公开(公告)号:US07008815B1

    公开(公告)日:2006-03-07

    申请号:US10711780

    申请日:2004-10-05

    IPC分类号: H01L21/00

    摘要: A method of manufacturing a self-aligned guard ring of a photo diode. The method includes defining a photo diode region on a semiconductor substrate and an isolation matter surrounding the photo diode region, forming a photo sensor in the photo diode region, covering a first mask on the photo sensor, forming a spacer around the first mask, covering a second mask on an edge of the isolation matter, and utilizing the first mask, the second mask, and the spacer to form a self-aligned guard ring surrounding the photo sensor.

    摘要翻译: 一种制造光电二极管的自对准保护环的方法。 该方法包括在半导体衬底上限定光电二极管区域和围绕光电二极管区域的隔离物质,在光电二极管区域中形成光电传感器,覆盖光电传感器上的第一掩模,在第一掩模周围形成间隔物,覆盖 在隔离物的边缘上的第二掩模,并且利用第一掩模,第二掩模和间隔物以形成围绕光传感器的自对准保护环。

    Network Connection Module, Computer Program, and Network Connection Method Thereof
    8.
    发明申请
    Network Connection Module, Computer Program, and Network Connection Method Thereof 审中-公开
    网络连接模块,计算机程序和网络连接方法

    公开(公告)号:US20160302239A1

    公开(公告)日:2016-10-13

    申请号:US14870411

    申请日:2015-09-30

    IPC分类号: H04W76/02

    CPC分类号: H04W76/10 H04W76/12 H04W84/18

    摘要: A network connection module, a computer program, and a network connection method thereof are disclosed. The method is used for allowing a portable electronic device to connect to a node in a mesh network environment. The method includes the steps of: searching a plurality of nodes; determining whether there is a specific node in the plural of nodes; if yes, setting the specific node as a bridging point; if not, setting a node with the strongest signal strength in the plurality of nodes as the bridge point; and broadcasting to the other nodes via the bridge point under the mesh network environment.

    摘要翻译: 公开了一种网络连接模块,计算机程序及其网络连接方法。 该方法用于允许便携式电子设备连接到网状网络环境中的节点。 该方法包括以下步骤:搜索多个节点; 确定所述多个节点中是否存在特定节点; 如果是,将特定节点设置为桥接点; 如果不是,则在多个节点中设置具有最强信号强度的节点作为桥点; 并通过网状环境下的桥接点向其他节点广播。

    Convex insert ring for etch chamber
    9.
    发明授权
    Convex insert ring for etch chamber 有权
    用于蚀刻室的凸形插入环

    公开(公告)号:US07381293B2

    公开(公告)日:2008-06-03

    申请号:US10340185

    申请日:2003-01-09

    IPC分类号: H01L21/00 C23C16/00

    摘要: A new and improved insert ring for a wafer support inside a processing chamber for the processing, particularly dry etching, of semiconductor wafer substrates. The insert ring includes a generally convex inner surface which faces the wafer support and defines a gap or berline wall between the insert ring and the wafer support. In one embodiment, the convex inner surface is convexly-tapered. In another embodiment, the convex inner surface is convexly-curved. Throughout etching of multiple successive substrates on the wafer support, accumulations of polymer material on the inner surface of the insert ring are prevented or at least substantially reduced. Consequently, polymer peeling is eliminated or reduced and operational intervals for the processing chamber or system between periodic maintenance or cleanings, are prolonged.

    摘要翻译: 一种用于晶片支撑件的新的改进的插入环,用于处理室,用于半导体晶片衬底的特别干蚀刻。 插入环包括面向晶片支撑件的大致凸形的内表面,并且在插入环和晶片支撑件之间限定间隙或边缘壁。 在一个实施例中,凸形内表面是凸出的。 在另一个实施例中,凸形内表面是凸曲面的。 在晶片支撑件上的多个连续衬底的整个蚀刻过程中,防止或至少大大减少了在插入环的内表面上积聚聚合物材料。 因此,聚合物剥离被消除或减少,并且延长了定期维护或清洁之间的处理室或系统的操作间隔。