发明授权
- 专利标题: Semiconductor integrated circuit device
- 专利标题(中): 半导体集成电路器件
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申请号: US11970370申请日: 2008-01-07
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公开(公告)号: US07518404B2公开(公告)日: 2009-04-14
- 发明人: Hiroyuki Mizuno , Koichiro Ishibashi , Masayuki Miyazaki
- 申请人: Hiroyuki Mizuno , Koichiro Ishibashi , Masayuki Miyazaki
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP8-314506 19961126; JP8-349427 19961227
- 主分类号: H03K3/01
- IPC分类号: H03K3/01
摘要:
A semiconductor device which includes a frequency-variable oscillation circuit including plural inverters, each of which features a PMOS transistor and a NMOS transistor, a first substrate bias generator including a first phase/frequency compare circuit that compares an output signal from the frequency-variable oscillation circuit with a reference clock signal and generating a first substrate bias voltage in response thereto, the first substrate bias voltage being supplied to substrates of the PMOS transistors in the oscillation circuit, and a second substrate bias generator including a second phase/frequency compare circuit that compares the output signal from the frequency-variable oscillation circuit with the reference clock and generating a second substrate bias voltage in response thereto, the second substrate bias voltage being supplied to substrates of the NMOS transistors in the oscillation circuit.
公开/授权文献
- US20080116934A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 公开/授权日:2008-05-22
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