发明授权
US07520171B2 Micro-electromechanical structure with self-compensation of the thermal drifts caused by thermomechanical stress 有权
微机电结构具有由热机械应力引起的热漂移的自补偿

Micro-electromechanical structure with self-compensation of the thermal drifts caused by thermomechanical stress
摘要:
In a micro-electromechanical structure of semiconductor material, a detection structure is formed by a stator and by a rotor, which are mobile with respect to one another in presence of an external stress and are subject to thermal stress; a compensation structure of a micro-electromechanical type, subject to thermal stress and invariant with respect to the external stress, is connected to the detection structure thereby the micro-electromechanical structure supplies an output signal correlated to the external stress and compensated in temperature.
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