发明授权
US07521301B2 Methods for fabricating integrated circuit field effect transistors including channel-containing fin having regions of high and low doping concentrations
有权
制造集成电路场效应晶体管的方法,其包括具有高掺杂浓度和低掺杂浓度区域的含通道翅片
- 专利标题: Methods for fabricating integrated circuit field effect transistors including channel-containing fin having regions of high and low doping concentrations
- 专利标题(中): 制造集成电路场效应晶体管的方法,其包括具有高掺杂浓度和低掺杂浓度区域的含通道翅片
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申请号: US11530651申请日: 2006-09-11
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公开(公告)号: US07521301B2公开(公告)日: 2009-04-21
- 发明人: Deok-Hyung Lee , Byeong-Chan Lee , Si-Young Choi , Taek-Jung Kim , Yong-Hoon Son , In-Soo Jung
- 申请人: Deok-Hyung Lee , Byeong-Chan Lee , Si-Young Choi , Taek-Jung Kim , Yong-Hoon Son , In-Soo Jung
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec, P.A.
- 优先权: KR2003-0040279 20030620
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
Integrated circuit field effect transistors include an integrated circuit substrate and a fin that projects away from the integrated circuit substrate, extends along the integrated circuit substrate, and includes a top that is remote from the integrated circuit substrate. A channel region is provided in the fin that is doped a conductivity type and has a higher doping concentration of the conductivity type adjacent the top than remote from the top. A source region and a drain region are provided in the fin on opposite sides of the channel region, and an insulated gate electrode extends across the fin adjacent the channel region. Related fabrication methods also are described.
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