发明授权
- 专利标题： Method of forming HfSiN metal for n-FET applications
- 专利标题（中）： 用于形成n-FET应用的HfSiN金属的方法
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申请号： US11875524申请日： 2007-10-19
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公开(公告)号： US07521346B2公开(公告)日： 2009-04-21
- 发明人: Alessandro C. Callegari , Martin M. Frank , Rajarao Jammy , Dianne L. Lacey , Fenton R. McFeely , Sufi Zafar
- 申请人： Alessandro C. Callegari , Martin M. Frank , Rajarao Jammy , Dianne L. Lacey , Fenton R. McFeely , Sufi Zafar
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Ido Tuchman, Esq.
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A compound metal comprising HfSiN which is a n-type metal having a workfunction of about 4.0 to about 4.5, preferably about 4.3, eV which is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer. Furthermore, after annealing the stack of HfSiN/high k dielectric/interfacial layer at a high temperature (on the order of about 1000° C.), there is a reduction of the interfacial layer, thus the gate stack produces a very small equivalent oxide thickness (12 Å classical), which cannot be achieved using TaSiN.
公开/授权文献
- US20080038905A1 METHOD OF FORMING HfSiN METAL FOR n-FET APPLICATIONS 公开/授权日：2008-02-14
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