发明授权
- 专利标题: MEMS device with non-standard profile
- 专利标题(中): 具有非标准型材的MEMS器件
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申请号: US10914575申请日: 2004-08-09
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公开(公告)号: US07521363B2公开(公告)日: 2009-04-21
- 发明人: John R. Martin , Lawrence E. Felton
- 申请人: John R. Martin , Lawrence E. Felton
- 申请人地址: US MA Norwood
- 专利权人: Analog Devices, Inc.
- 当前专利权人: Analog Devices, Inc.
- 当前专利权人地址: US MA Norwood
- 代理机构: Bromberg & Sunstein LLP
- 主分类号: H01L29/84
- IPC分类号: H01L29/84
摘要:
A method of producing a MEMS device forms structure on a non-standard device wafer. To that end, the method provides the noted non-standard device wafer, which has a wafer outer diameter and a non-standard thickness. As known by those in the art, a standard device wafer has a standard thickness when its outer diameter equals the wafer outer diameter. In illustrative embodiments, however, the non-standard thickness is smaller than the standard thickness. The method then forms structure on the non-standard device wafer.
公开/授权文献
- US20060027885A1 MEMS device with non-standard profile 公开/授权日:2006-02-09
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