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US07521706B2 Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same 有权
具有由电极孔的侧壁限定的相变材料的接触表面积的相变存储器件及其形成方法

Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same
摘要：
Phase change memory devices and methods of making phase changeable memory devices including a heating electrode disposed on a substrate are provided. The heating electrode includes an electrode hole in the heating electrode. A phase change material pattern is provided in the electrode hole and contacts a sidewall of the electrode hole. In some embodiments, the electrode hole extends through the heating electrode. In some embodiments, the phase changeable material pattern only contacts the electrode at a sidewall of the electrode hole.
摘要（中）：

提供了相变存储器件和制造包括设置在基板上的加热电极的相变存储器件的方法。 加热电极在加热电极中包括电极孔。 在电极孔中设置相变材料图案，并与电极孔的侧壁接触。 在一些实施例中，电极孔延伸穿过加热电极。 在一些实施例中，相变材料图案仅在电极孔的侧壁处接触电极。

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