发明授权
- 专利标题: Memory module having memory devices on two sides
- 专利标题(中): 存储器模块在两侧具有存储器件
-
申请号: US11459858申请日: 2006-07-25
-
公开(公告)号: US07523244B2公开(公告)日: 2009-04-21
- 发明人: Haw-Jyh Liaw , David Nguyen
- 申请人: Haw-Jyh Liaw , David Nguyen
- 申请人地址: US CA Los Altos
- 专利权人: Rambus Inc.
- 当前专利权人: Rambus Inc.
- 当前专利权人地址: US CA Los Altos
- 代理机构: Morgan, Lewis & Bockius LLP
- 主分类号: G06F13/42
- IPC分类号: G06F13/42
摘要:
A memory module includes a first signal line to carry a first signal that enters the module at a first end of the first signal line and a second signal line to carry a second signal that enters the module at a first end of the second signal line. The module includes a first memory device disposed on a first side of the module and a second memory module disposed on a second side of the module positioned opposite to the first side. The first memory device and the second memory device are connected to the first signal line and the second signal line. The first signal and the second signal traverse alongside each other to arrive in turn at the first memory device and the second memory device.
公开/授权文献
- US20060277345A1 High Frequency Bus System 公开/授权日:2006-12-07
信息查询