发明授权
- 专利标题: Method and system for removing an oxide from a substrate
- 专利标题(中): 从基材中除去氧化物的方法和系统
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申请号: US11094462申请日: 2005-03-31
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公开(公告)号: US07524769B2公开(公告)日: 2009-04-28
- 发明人: Anthony Dip , Allen John Leith , Seungho Oh
- 申请人: Anthony Dip , Allen John Leith , Seungho Oh
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland Maier & Neustadt, P.C.
- 主分类号: H01L21/302
- IPC分类号: H01L21/302
摘要:
A method and system for processing a substrate includes providing the substrate in a process chamber, where the substrate contains an oxide layer formed thereon, exciting a hydrogen-containing gas in a remote plasma source coupled to the process chamber, and exposing the substrate to a flow of the excited hydrogen-containing gas at a first substrate temperature lower than about 900° C. to remove the oxide layer from the substrate. The substrate is then maintained at a second temperature different than the first substrate temperature, and a silicon-containing film is formed on the substrate at the second substrate temperature.
公开/授权文献
- US20060228900A1 Method and system for removing an oxide from a substrate 公开/授权日:2006-10-12