Invention Grant
- Patent Title: Radiation detector with an epitaxially grown semiconductor body
- Patent Title (中): 具有外延生长半导体体的辐射检测器
-
Application No.: US11240987Application Date: 2005-09-29
-
Publication No.: US07525083B2Publication Date: 2009-04-28
- Inventor: Arndt Jaeger , Peter Stauβ
- Applicant: Arndt Jaeger , Peter Stauβ
- Applicant Address: DE Regensburg
- Assignee: Osram Opto Semiconductors GmbH
- Current Assignee: Osram Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Cohen Pontani Lieberman & Pavane LLP
- Priority: DE102004047645 20040930; DE102005001280 20050111
- Main IPC: H01J40/14
- IPC: H01J40/14 ; H01L27/00

Abstract:
A radiation detector comprising a plurality of detector elements (1, 2, 3) each having an active region (14, 24, 34) provided for radiation reception and for signal generation, the detector elements being monolithically integrated into a semiconductor body (5) of the radiation detector, a signal that is to be generated in a first detector element being able to be tapped off separately from a signal that is to be generated in a second detector element, and at least one of the active regions being designed for radiation reception in the visible spectral range.
Public/Granted literature
- US20070241260A1 RADIATION DETECTOR WITH AN EPITAXIALLY GROWN SEMICONDUCTOR BODY Public/Granted day:2007-10-18
Information query