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US07525083B2 Radiation detector with an epitaxially grown semiconductor body 有权
具有外延生长半导体体的辐射检测器

Radiation detector with an epitaxially grown semiconductor body
Abstract:
A radiation detector comprising a plurality of detector elements (1, 2, 3) each having an active region (14, 24, 34) provided for radiation reception and for signal generation, the detector elements being monolithically integrated into a semiconductor body (5) of the radiation detector, a signal that is to be generated in a first detector element being able to be tapped off separately from a signal that is to be generated in a second detector element, and at least one of the active regions being designed for radiation reception in the visible spectral range.
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