发明授权
- 专利标题: Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
- 专利标题(中): 使用无氢溅射氮化物钝化宽带隙基半导体器件
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申请号: US11169378申请日: 2005-06-29
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公开(公告)号: US07525122B2公开(公告)日: 2009-04-28
- 发明人: Zoltan Ring , Helmut Hagleitner , Jason Patrick Henning , Andrew Mackenzie , Scott Allen , Scott Thomas Sheppard , Richard Peter Smith , Saptharishi Sriram , Allan Ward, III
- 申请人: Zoltan Ring , Helmut Hagleitner , Jason Patrick Henning , Andrew Mackenzie , Scott Allen , Scott Thomas Sheppard , Richard Peter Smith , Saptharishi Sriram , Allan Ward, III
- 申请人地址: US NC Durham
- 专利权人: Cree, Inc.
- 当前专利权人: Cree, Inc.
- 当前专利权人地址: US NC Durham
- 代理机构: Summa, Additon & Ashe, P.A.
- 主分类号: H01L29/15
- IPC分类号: H01L29/15 ; H01L31/0256
摘要:
A passivated semiconductor structure and associated method are disclosed. The structure includes a silicon carbide substrate or layer; an oxidation layer on the silicon carbide substrate for lowering the interface density between the silicon carbide substrate and the thermal oxidation layer; a first sputtered non-stoichiometric silicon nitride layer on the thermal oxidation layer for reducing parasitic capacitance and minimizing device trapping; a second sputtered non-stoichiometric silicon nitride layer on the first layer for positioning subsequent passivation layers further from the substrate without encapsulating the structure; a sputtered stoichiometric silicon nitride layer on the second sputtered layer for encapsulating the structure and for enhancing the hydrogen barrier properties of the passivation layers; and a chemical vapor deposited environmental barrier layer of stoichiometric silicon nitride for step coverage and crack prevention on the encapsulant layer.