发明授权
- 专利标题： Magnetoresistive element, magnetoresistive head, magnetic recording apparatus, and magnetic memory
- 专利标题（中）： 磁阻元件，磁阻磁头，磁记录装置和磁存储器
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申请号： US11269878申请日： 2005-11-09
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公开(公告)号： US07525776B2公开(公告)日： 2009-04-28
- 发明人: Hideaki Fukuzawa , Hiromi Yuasa , Katsuhiko Koui , Hitoshi Iwasaki
- 申请人： Hideaki Fukuzawa , Hiromi Yuasa , Katsuhiko Koui , Hitoshi Iwasaki
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Nixon & Vanderhye, PC
- 优先权： JP2004-325315 20041109
- 主分类号： G11B5/39
- IPC分类号： G11B5/39
摘要：
A magnetoresistive element has a magnetization pinned layer a magnetization direction of which is substantially pinned in one direction, a magnetization free layer a magnetization direction of which varies depending on an external field, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating the insulating layer, the magnetization pinned layer or magnetization free layer located under the spacer layer comprising crystal grains separated by grain boundaries extending across a thickness thereof, in which, supposing that an in-plane position of one end of each of the crystal grains is set to 0 and an in-plane position of a grain boundary adjacent to the other end of the crystal grain is set to 100, the current path corresponding the crystal grain is formed on a region in a range between 20 and 80 of the in-plane position.
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