发明授权
- 专利标题: Method of treating gas sensor element
- 专利标题(中): 气体传感器元件处理方法
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申请号: US11091349申请日: 2005-03-28
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公开(公告)号: US07527718B2公开(公告)日: 2009-05-05
- 发明人: Kunihiko Nakagaki , Sang Jae Lee , Hiroyuki Shindo
- 申请人: Kunihiko Nakagaki , Sang Jae Lee , Hiroyuki Shindo
- 申请人地址: JP Nagoya
- 专利权人: NGK Insulators, Ltd.
- 当前专利权人: NGK Insulators, Ltd.
- 当前专利权人地址: JP Nagoya
- 代理机构: Burr & Brown
- 优先权: JP2004-095540 20040329; JP2005-060520 20050304
- 主分类号: G01N27/26
- IPC分类号: G01N27/26
摘要:
A method of treating a gas sensor element for improving measurement characteristics thereof, including: heating the gas sensor element at a temperature of 600-1000° C. for 3-24 hours in a treatment atmosphere in which an oxygen concentration is regulated to be not higher than 0.2% and in which are included: (A) not lower than 1000 ppm of an adsorptive gas component wherein an adsorptive capable of being adsorbed on the measuring electrode is bound to oxygen; and (B) a combustible gas in an amount that can be substantially stoichiometrically oxidized by oxygen that is generated upon reduction or decomposition of the adsorptive gas component, so that the adsorptive gas component is reduced or decomposed for permitting the adsorptive in the adsorptive gas component to be adsorbed on the measuring electrode, and so that the noble metal material of the measuring electrode is reduced.
公开/授权文献
- US20050210657A1 Method of treating gas sensor element 公开/授权日:2005-09-29
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