发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11519818申请日： 2006-09-13
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公开(公告)号： US07528016B2公开(公告)日： 2009-05-05
- 发明人: Yasushi Yamazaki
- 申请人： Yasushi Yamazaki
- 申请人地址： JP Tokyo
- 专利权人： Elpida Memory, Inc.
- 当前专利权人： Elpida Memory, Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2005-266752 20050914
- 主分类号： H01L21/332
- IPC分类号： H01L21/332
摘要：
In a method of manufacturing a semiconductor device, a recess is formed in a semiconductor substrate. A gate insulating film is formed on a surface of the semiconductor substrate and a surface of the recess; and a gate electrode film is deposited on the gate insulating film to fill the recess. Then, a gate electrode is formed by etching the gate electrode film by using a predetermined mask, and ion implantation into the semiconductor substrate is carried out to form diffusion layers extending from the recess, before the forming a gate electrode at least.
公开/授权文献
- US20070059871A1 Semiconductor device and manufacturing method thereof 公开/授权日：2007-03-15
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