发明授权
- 专利标题: Lateral junction field-effect transistor
- 专利标题(中): 侧面场效应晶体管
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申请号: US11337143申请日: 2006-01-20
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公开(公告)号: US07528426B2公开(公告)日: 2009-05-05
- 发明人: Shin Harada , Kenichi Hirotsu , Hiroyuki Matsunami , Tsunenobu Kimoto
- 申请人: Shin Harada , Kenichi Hirotsu , Hiroyuki Matsunami , Tsunenobu Kimoto
- 申请人地址: JP Osaka-shi
- 专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人地址: JP Osaka-shi
- 代理商 W. F. Fasse; W. G. Fasse
- 主分类号: H01L29/808
- IPC分类号: H01L29/808
摘要:
A lateral JFET has a basic structure including an n-type semiconductor layer (3) formed of an n-type impurity region and a p-type semiconductor layer formed of a p-type impurity region on the n-type semiconductor layer (3). Moreover, in the p-type semiconductor layer, there are provided a p+-type gate region layer (7) extending into the n-type semiconductor layer (3) and containing p-type impurities of an impurity concentration higher than that of the n-type semiconductor layer (3) and an n+-type drain region layer (9) spaced from the p+-type gate region layer (7) by a predetermined distance and containing n-type impurities of an impurity concentration higher than that of the n-type semiconductor layer (3). With this structure, the lateral JFET can be provided that has an ON resistance further decreased while maintaining a high breakdown voltage performance.
公开/授权文献
- US20060118813A1 Lateral junction field-effect transistor 公开/授权日:2006-06-08