Invention Grant
US07528461B2 Bipolar power transistor and related integrated device with clamp means of the collector voltage
有权
双极功率晶体管及相关集成器件的钳位装置为集电极电压
- Patent Title: Bipolar power transistor and related integrated device with clamp means of the collector voltage
- Patent Title (中): 双极功率晶体管及相关集成器件的钳位装置为集电极电压
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Application No.: US11423335Application Date: 2006-06-09
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Publication No.: US07528461B2Publication Date: 2009-05-05
- Inventor: Davide Patti , Sebastiano Aparo
- Applicant: Davide Patti , Sebastiano Aparo
- Applicant Address: IT Agrate Brianza (MI)
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza (MI)
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Agent Lisa K. Jorgenson
- Priority: ITVA2005A0038 20050610
- Main IPC: H01L29/73
- IPC: H01L29/73
Abstract:
A bipolar power transistor does not include integration of a Zener diode electrically connected between the base and collector for limiting the collector voltage. The power transistor is formed in a substrate, and includes an equalization diffusion and an auxiliary diffusion forming a P-N junction along a perimeter of the substrate. An equalization conduction layer is in contact with the equalization diffusion and the auxiliary diffusion for electrically shorting the P-N junction.
Public/Granted literature
- US20070013032A1 BIPOLAR POWER TRANSISTOR AND RELATED INTEGRATED DEVICE WITH CLAMP MEANS OF THE COLLECTOR VOLTAGE Public/Granted day:2007-01-18
Information query
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