公开(公告)号：US07528461B2

公开(公告)日：2009-05-05

申请号：US11423335

申请日：2006-06-09

申请人： Davide Patti ,  Sebastiano Aparo

发明人： Davide Patti ,  Sebastiano Aparo

IPC分类号： H01L29/73

CPC分类号： H01L29/7302 ,  H01L29/0692 ,  H01L29/866

摘要： A bipolar power transistor does not include integration of a Zener diode electrically connected between the base and collector for limiting the collector voltage. The power transistor is formed in a substrate, and includes an equalization diffusion and an auxiliary diffusion forming a P-N junction along a perimeter of the substrate. An equalization conduction layer is in contact with the equalization diffusion and the auxiliary diffusion for electrically shorting the P-N junction.

摘要翻译： 双极功率晶体管不包括电连接在基极和集电极之间的齐纳二极管的集成，以限制集电​​极电压。 功率晶体管形成在衬底中，并且包括沿衬底的周边形成P-N结的均衡扩散和辅助扩散。 均衡传导层与用于电短路P-N结的均衡扩散和辅助扩散接触。

公开(公告)号：US20070013032A1

公开(公告)日：2007-01-18

申请号：US11423335

申请日：2006-06-09

申请人： Davide Patti ,  Sebastiano Aparo

发明人： Davide Patti ,  Sebastiano Aparo

IPC分类号： H01L27/082

CPC分类号： H01L29/7302 ,  H01L29/0692 ,  H01L29/866

摘要： A bipolar power transistor does not include integration of a Zener diode electrically connected between the base and collector for limiting the collector voltage. The power transistor is formed in a substrate, and includes an equalization diffusion and an auxiliary diffusion forming a P-N junction along a perimeter of the substrate An equalization conduction layer is in contact with the equalization diffusion and the auxiliary diffusion for electrically shorting the P-N junction.

摘要翻译： 双极功率晶体管不包括电连接在基极和集电极之间的齐纳二极管的集成，以限制集电​​极电压。 功率晶体管形成在衬底中，并且包括沿着衬底的周边形成P-N结的均衡扩散和辅助扩散。均衡传导层与用于电短路P-N结的均衡扩散和辅助扩散接触。