Invention Grant
- Patent Title: Electron emitter and method of fabricating electron emitter
- Patent Title (中): 电子发射体和制造电子发射体的方法
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Application No.: US11145004Application Date: 2005-06-02
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Publication No.: US07528539B2Publication Date: 2009-05-05
- Inventor: Iwao Ohwada , Kei Sato , Nobuyuki Kobayashi , Shohei Yokoyama
- Applicant: Iwao Ohwada , Kei Sato , Nobuyuki Kobayashi , Shohei Yokoyama
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown
- Priority: JP2004-169997 20040608; JP2004-194472 20040630
- Main IPC: H01J1/46
- IPC: H01J1/46

Abstract:
An electron emitter includes an emitter layer formed of a dielectric material, an upper electrode, and a lower electrode. A drive voltage is applied between the upper electrode and the lower electrode, for emitting electrons. The upper electrode is formed of scale-like conductive particles on the upper surface of the emitter layer and has a plurality of opening portions. The surfaces of overhanging portions of the opening portions that face the emitter layer are apart from the emitter layer. The overhanging portions each have such a cross-sectional shape as to be acutely pointed toward the inner edge of the opening portion, or the tip end of the overhanging portion, so that lines of electric force concentrate at the inner edge.
Public/Granted literature
- US20050269929A1 Electron emitter and method of fabricating electron emitter Public/Granted day:2005-12-08
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