发明授权
- 专利标题: Electron emitter and method of fabricating electron emitter
- 专利标题(中): 电子发射体和制造电子发射体的方法
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申请号: US11145004申请日: 2005-06-02
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公开(公告)号: US07528539B2公开(公告)日: 2009-05-05
- 发明人: Iwao Ohwada , Kei Sato , Nobuyuki Kobayashi , Shohei Yokoyama
- 申请人: Iwao Ohwada , Kei Sato , Nobuyuki Kobayashi , Shohei Yokoyama
- 申请人地址: JP Nagoya
- 专利权人: NGK Insulators, Ltd.
- 当前专利权人: NGK Insulators, Ltd.
- 当前专利权人地址: JP Nagoya
- 代理机构: Burr & Brown
- 优先权: JP2004-169997 20040608; JP2004-194472 20040630
- 主分类号: H01J1/46
- IPC分类号: H01J1/46
摘要:
An electron emitter includes an emitter layer formed of a dielectric material, an upper electrode, and a lower electrode. A drive voltage is applied between the upper electrode and the lower electrode, for emitting electrons. The upper electrode is formed of scale-like conductive particles on the upper surface of the emitter layer and has a plurality of opening portions. The surfaces of overhanging portions of the opening portions that face the emitter layer are apart from the emitter layer. The overhanging portions each have such a cross-sectional shape as to be acutely pointed toward the inner edge of the opening portion, or the tip end of the overhanging portion, so that lines of electric force concentrate at the inner edge.
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