发明授权
- 专利标题: Semiconductor pressure sensor and manufacturing method thereof
- 专利标题(中): 半导体压力传感器及其制造方法
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申请号: US11843342申请日: 2007-08-22
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公开(公告)号: US07530276B2公开(公告)日: 2009-05-12
- 发明人: Masakazu Sato , Tatsuya Ito , Hideto Noguchi
- 申请人: Masakazu Sato , Tatsuya Ito , Hideto Noguchi
- 申请人地址: JP Tokyo
- 专利权人: Fujikura Ltd.
- 当前专利权人: Fujikura Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Sughrue Mion, PLLC
- 优先权: JP2003-021284 20030130
- 主分类号: G01L9/00
- IPC分类号: G01L9/00 ; G01L9/16
摘要:
This invention aims to realize reduction in size without impairing measurement accuracy or connection reliability in a semiconductor pressure sensor in which a glass substrate is adhered to a rear-surface side of a pressure-sensitive chip in which piezoresistive pressure-sensitive gauges have been formed on a front surface of a diaphragm formed of a silicon single crystal to form a space between a rear surface of the diaphragm and the glass substrate, for measuring a pressure applied to the front surface of the diaphragm with reference to a pressure of the first space as a standard pressure. In order to achieve this object, the semiconductor pressure sensor includes resinous projections formed on pressure-sensitive gauge electrodes disposed on a front surface of the pressure-sensitive chip or on wiring from the pressure-sensitive gauge electrodes and bumps formed so as to partially or entirely cover the resinous projections.
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