公开(公告)号：US20080173096A1

公开(公告)日：2008-07-24

申请号：US11843342

申请日：2007-08-22

申请人： Masakazu SATO ,  Tatsuya Ito ,  Hideto Noguchi

发明人： Masakazu SATO ,  Tatsuya Ito ,  Hideto Noguchi

IPC分类号： G01L9/00 ,  H01L21/02

CPC分类号： G01L9/0054 ,  G01L19/0069

摘要： This invention aims to realize reduction in size without impairing measurement accuracy or connection reliability in a semiconductor pressure sensor in which a glass substrate is adhered to a rear-surface side of a pressure-sensitive chip in which piezoresistive pressure-sensitive gauges have been formed on a front surface of a diaphragm formed of a silicon single crystal to form a space between a rear surface of the diaphragm and the glass substrate, for measuring a pressure applied to the front surface of the diaphragm with reference to a pressure of the first space as a standard pressure. In order to achieve this object, the semiconductor pressure sensor includes resinous projections formed on pressure-sensitive gauge electrodes disposed on a front surface of the pressure-sensitive chip or on wiring from the pressure-sensitive gauge electrodes and bumps formed so as to partially or entirely cover the resinous projections.

摘要翻译： 本发明的目的是在不损害其中玻璃基板粘附在其上形成有压阻压力计的压敏片的背面侧的半导体压力传感器中实现尺寸的减小而不损害测量精度或连接可靠性 由硅单晶形成的隔膜的前表面，以在隔膜的后表面和玻璃基板之间形成空间，用于参照第一空间的压力测量施加到隔膜前表面的压力 标准压力。 为了实现该目的，半导体压力传感器包括形成在压敏表电极上的树脂突起，所述压敏电极设置在压敏芯片的前表面上，或者布置在压敏表电极和凸起上，凸起形成为局部或 完全覆盖树脂突起。

公开(公告)号：US07530276B2

公开(公告)日：2009-05-12

申请号：US11843342

申请日：2007-08-22

申请人： Masakazu Sato ,  Tatsuya Ito ,  Hideto Noguchi

发明人： Masakazu Sato ,  Tatsuya Ito ,  Hideto Noguchi

IPC分类号： G01L9/00 ,  G01L9/16

CPC分类号： G01L9/0054 ,  G01L19/0069

摘要： This invention aims to realize reduction in size without impairing measurement accuracy or connection reliability in a semiconductor pressure sensor in which a glass substrate is adhered to a rear-surface side of a pressure-sensitive chip in which piezoresistive pressure-sensitive gauges have been formed on a front surface of a diaphragm formed of a silicon single crystal to form a space between a rear surface of the diaphragm and the glass substrate, for measuring a pressure applied to the front surface of the diaphragm with reference to a pressure of the first space as a standard pressure. In order to achieve this object, the semiconductor pressure sensor includes resinous projections formed on pressure-sensitive gauge electrodes disposed on a front surface of the pressure-sensitive chip or on wiring from the pressure-sensitive gauge electrodes and bumps formed so as to partially or entirely cover the resinous projections.

摘要翻译： 本发明的目的是在不损害其中玻璃基板粘附在其上形成有压阻压力计的压敏片的背面侧的半导体压力传感器中实现尺寸的减小而不损害测量精度或连接可靠性 由硅单晶形成的隔膜的前表面，以在隔膜的后表面和玻璃基板之间形成空间，用于参照第一空间的压力测量施加到隔膜前表面的压力 标准压力。 为了实现该目的，半导体压力传感器包括形成在压敏表电极上的树脂突起，所述压敏电极设置在压敏芯片的前表面上，或者布置在压敏表电极和凸起上，凸起形成为局部或 完全覆盖树脂突起。

公开(公告)号：US20060185437A1

公开(公告)日：2006-08-24

申请号：US10543493

申请日：2004-01-29

申请人： Masakazu Sato ,  Tatsuya Ito ,  Hideto Noguchi

发明人： Masakazu Sato ,  Tatsuya Ito ,  Hideto Noguchi

IPC分类号： G01L9/00

CPC分类号： G01L9/0054 ,  G01L19/0069

摘要： This invention aims to realize reduction in size without impairing measurement accuracy or connection reliability in a semiconductor pressure sensor in which a glass substrate is adhered to a rear-surface side of a pressure-sensitive chip in which piezoresistive pressure-sensitive gauges have been formed on a front surface of a diaphragm formed of a silicon single crystal to form a space between a rear surface of the diaphragm and the glass substrate, for measuring a pressure applied to the front surface of the diaphragm with reference to a pressure of the first space as a standard pressure. In order to achieve this object, the semiconductor pressure sensor includes resinous projections formed on pressure-sensitive gauge electrodes disposed on a front surface of the pressure-sensitive chip or on wiring from the pressure-sensitive gauge electrodes and bumps formed so as to partially or entirely cover the resinous projections.

摘要翻译： 本发明的目的是在不损害其中玻璃基板粘附在其上形成有压阻压力计的压敏片的背面侧的半导体压力传感器中实现尺寸的减小而不损害测量精度或连接可靠性 由硅单晶形成的隔膜的前表面，以在隔膜的后表面和玻璃基板之间形成空间，用于参照第一空间的压力测量施加到隔膜前表面的压力 标准压力。 为了实现该目的，半导体压力传感器包括形成在压敏表电极上的树脂突起，所述压敏电极设置在压敏芯片的前表面上，或者布置在压敏表电极和凸起上，凸起形成为局部或 完全覆盖树脂突起。

公开(公告)号：US07284443B2

公开(公告)日：2007-10-23

申请号：US10543493

申请日：2004-01-29

申请人： Masakazu Sato ,  Tatsuya Ito ,  Hideto Noguchi

发明人： Masakazu Sato ,  Tatsuya Ito ,  Hideto Noguchi

IPC分类号： G01L9/00

CPC分类号： G01L9/0054 ,  G01L19/0069

摘要： This invention aims to realize reduction in size without impairing measurement accuracy or connection reliability in a semiconductor pressure sensor in which a glass substrate is adhered to a rear-surface side of a pressure-sensitive chip in which piezoresistive pressure-sensitive gauges have been formed on a front surface of a diaphragm formed of a silicon single crystal to form a space between a rear surface of the diaphragm and the glass substrate, for measuring a pressure applied to the front surface of the diaphragm with reference to a pressure of the first space as a standard pressure. In order to achieve this object, the semiconductor pressure sensor includes resinous projections formed on pressure-sensitive gauge electrodes disposed on a front surface of the pressure-sensitive chip or on wiring from the pressure-sensitive gauge electrodes and bumps formed so as to partially or entirely cover the resinous projections.

摘要翻译： 本发明的目的是在不损害其中玻璃基板粘附在其上形成有压阻压力计的压敏片的背面侧的半导体压力传感器中实现尺寸的减小而不损害测量精度或连接可靠性 由硅单晶形成的隔膜的前表面，以在隔膜的后表面和玻璃基板之间形成空间，用于参照第一空间的压力测量施加到隔膜前表面的压力 标准压力。 为了实现该目的，半导体压力传感器包括形成在压敏表电极上的树脂突起，所述压敏电极设置在压敏芯片的前表面上，或者布置在压敏表电极和凸起上，凸起形成为局部或 完全覆盖树脂突起。

公开(公告)号：US07429779B2

公开(公告)日：2008-09-30

申请号：US11189134

申请日：2005-07-26

申请人： Kazuhisa Itoi ,  Masakazu Sato ,  Tatsuya Ito

发明人： Kazuhisa Itoi ,  Masakazu Sato ,  Tatsuya Ito

IPC分类号： H01L43/00

CPC分类号： H01L28/10 ,  Y10T29/49117

摘要： A semiconductor device includes a semiconductor substrate having an electrode formed above a surface thereof; a first insulating resin layer that is provided over the semiconductor substrate and has a first opening defined at a position corresponding to the electrode; a first wiring layer that is provided on the first insulating resin layer and is connected to the electrode through the first opening; a second insulating resin layer provided over the first insulating resin layer and the first wiring layer, the second insulating resin layer having a second opening that is defined at a position different from the position of the first opening in a direction of the surface of the semiconductor substrate; and a second wiring layer that is provided on the second insulating resin layer and is connected to the first wiring layer through the second opening, wherein the second wiring layer includes an induction element, and a sum of a thickness of the first insulating resin layer and a thickness of the second insulating resin layer is not less than 5 μm and not more than 60 μm.

公开(公告)号：US20060022287A1

公开(公告)日：2006-02-02

申请号：US11189134

申请日：2005-07-26

申请人： Kazuhisa Itoi ,  Masakazu Sato ,  Tatsuya Ito

发明人： Kazuhisa Itoi ,  Masakazu Sato ,  Tatsuya Ito

IPC分类号： H01L43/00

CPC分类号： H01L28/10 ,  Y10T29/49117

摘要： A semiconductor device includes a semiconductor substrate having an electrode formed above a surface thereof; a first insulating resin layer that is provided over the semiconductor substrate and has a first opening defined at a position corresponding to the electrode; a first wiring layer that is provided on the first insulating resin layer and is connected to the electrode through the first opening; a second insulating resin layer provided over the first insulating resin layer and the first wiring layer, the second insulating resin layer having a second opening that is defined at a position different from the position of the first opening in a direction of the surface of the semiconductor substrate; and a second wiring layer that is provided on the second insulating resin layer and is connected to the first wiring layer through the second opening, wherein the second wiring layer includes an induction element, and a sum of a thickness of the first insulating resin layer and a thickness of the second insulating resin layer is not less than 5 μm and not more than 60 μm.

摘要翻译： 半导体器件包括其表面上形成有电极的半导体衬底; 第一绝缘树脂层，设置在所述半导体衬底上并且具有限定在对应于所述电极的位置的第一开口; 第一布线层，设置在第一绝缘树脂层上，并通过第一开口连接到电极; 设置在所述第一绝缘树脂层和所述第一布线层上的第二绝缘树脂层，所述第二绝缘树脂层具有限定在与所述第一开口的位置不同的位置的第二开口，所述第二开口沿所述半导体的表面的方向 基质; 以及第二布线层，其设置在所述第二绝缘树脂层上并且通过所述第二开口连接到所述第一布线层，其中所述第二布线层包括感应元件，并且所述第一绝缘树脂层和 第二绝缘树脂层的厚度为5μm以上且60μm以下。

公开(公告)号：US20080203527A1

公开(公告)日：2008-08-28

申请号：US12081960

申请日：2008-04-24

申请人： Kazuhisa Itoi ,  Masakazu Sato ,  Tatsuya Ito

发明人： Kazuhisa Itoi ,  Masakazu Sato ,  Tatsuya Ito

IPC分类号： H01L29/00

CPC分类号： H01L28/10 ,  Y10T29/49117

摘要： A semiconductor device includes a semiconductor substrate having an electrode formed above a surface thereof; a first insulating resin layer that is provided over the semiconductor substrate and has a first opening defined at a position corresponding to the electrode; a first wiring layer that is provided on the first insulating resin layer and is connected to the electrode through the first opening; a second insulating resin layer provided over the first insulating resin layer and the first wiring layer, the second insulating resin layer having a second opening that is defined at a position different from the position of the first opening in a direction of the surface of the semiconductor substrate; and a second wiring layer that is provided on the second insulating resin layer and is connected to the first wiring layer through the second opening, wherein the second wiring layer includes an induction element, and a sum of a thickness of the first insulating resin layer and a thickness of the second insulating resin layer is not less than 5 μm and not more than 60 μm.

摘要翻译： 半导体器件包括其表面上形成有电极的半导体衬底; 第一绝缘树脂层，设置在所述半导体衬底上并且具有限定在对应于所述电极的位置的第一开口; 第一布线层，设置在第一绝缘树脂层上，并通过第一开口连接到电极; 设置在所述第一绝缘树脂层和所述第一布线层上的第二绝缘树脂层，所述第二绝缘树脂层具有限定在与所述第一开口的位置不同的位置的第二开口，所述第二开口沿所述半导体的表面的方向 基质; 以及第二布线层，其设置在所述第二绝缘树脂层上并且通过所述第二开口连接到所述第一布线层，其中所述第二布线层包括感应元件，并且所述第一绝缘树脂层和 第二绝缘树脂层的厚度为5μm以上且60μm以下。

公开(公告)号：US08651465B2

公开(公告)日：2014-02-18

申请号：US12996472

申请日：2010-01-29

申请人： Tatsuya Ito ,  Noboru Arakawa

发明人： Tatsuya Ito ,  Noboru Arakawa

IPC分类号： F16F1/38

CPC分类号： F16F1/3842

摘要： A method of manufacturing a bushing assembly that includes a vibration damping rubber bushing having a round cylindrical resin outer cylinder, which is assembled by press fitting an outside peripheral face of the outer cylinder in an axial direction into a cylindrical metal mated component having a circular inside peripheral face. The vibration damping rubber bushing is press fit into the mated component with a rigid powder composed of material harder than the outer cylinder deposited in a section of the resin outer cylinder that is situated on the outside peripheral face and that mates with the inside peripheral face of the mated component, and the outer cylinder and the mated component are assembled in a mated condition such that the rigid powder intervenes between the outside peripheral face of the outer cylinder and the inside peripheral face of the mated component.

摘要翻译： 一种衬套组件的制造方法，其包括：具有圆筒形树脂外筒的减振橡胶衬套，其通过将外筒的外周面沿轴向压配合到具有圆形内侧的圆筒形的金属配合部件 外围脸。 减震橡胶衬套用刚性粉末压配合到配合部件中，该刚性粉末由位于外周面上的树脂外筒的一部分中沉积的外圆柱体以上的材料组成，并与外周面相配合 配合部件和外筒和配合部件以配合状态组装，使得刚性粉末介入外筒的外周面和配合部件的内周面之间。

公开(公告)号：US08581388B2

公开(公告)日：2013-11-12

申请号：US12976427

申请日：2010-12-22

申请人： Shinnosuke Maeda ,  Tetsuo Suzuki ,  Atsuhiko Sugimoto ,  Tatsuya Ito ,  Takuya Hando ,  Satoshi Hirano

发明人： Shinnosuke Maeda ,  Tetsuo Suzuki ,  Atsuhiko Sugimoto ,  Tatsuya Ito ,  Takuya Hando ,  Satoshi Hirano

IPC分类号： H01L23/053 ,  H01L21/4763

CPC分类号： H05K3/3452 ,  H01L23/49811 ,  H01L23/49822 ,  H01L2924/0002 ,  H05K1/113 ,  H05K3/205 ,  H05K3/383 ,  H05K3/4682 ,  H05K2201/068 ,  H05K2201/094 ,  H05K2201/09527 ,  H05K2201/099 ,  H05K2203/0346 ,  H05K2203/0369 ,  H01L2924/00

摘要： A multilayered wiring substrate, comprising: a plurality of first main surface side connecting terminals arranged in a first main surface of a stack structure; and a plurality of second main surface side connecting terminals being arranged in a second main surface of the stack structure; wherein a plurality of conductor layers are alternately formed in a plurality of stacked resin insulation layers and are operably connected to each other through via conductors tapered such that diameters thereof are widened toward the first or the second main surface, wherein a plurality of openings are formed in an exposed outermost resin insulation layer in the second main surface, and terminal outer surfaces of the second main surface side connecting terminals arranged to match with the plurality of the openings are positioned inwardly from an outer main surface of the exposed outermost resin insulation layer, and edges of terminal inner surfaces are rounded.

摘要翻译： 一种多层布线基板，包括：布置在堆叠结构的第一主表面中的多个第一主表面侧连接端子; 并且多个第二主表面侧连接端子布置在所述堆叠结构的第二主表面中; 其中多个导体层交替地形成在多个堆叠的树脂绝缘层中，并且通过锥形的通孔导体可操作地连接，使得其直径朝向第一或第二主表面加宽，其中形成多个开口 在第二主表面中暴露的最外层树脂绝缘层中，并且布置成与多个开口相匹配的第二主表面侧连接端子的端子外表面从暴露的最外层树脂绝缘层的外主表面位于内侧， 并且端子内表面的边缘是圆形的。

公开(公告)号：US08162636B2

公开(公告)日：2012-04-24

申请号：US12465270

申请日：2009-05-13

申请人： Kenji Yokoi ,  Masao Iguchi ,  Kazuhiro Kuroki ,  Tatsuya Ito

发明人： Kenji Yokoi ,  Masao Iguchi ,  Kazuhiro Kuroki ,  Tatsuya Ito

IPC分类号： F04C18/00 ,  F04C2/00

CPC分类号： F04C18/0215 ,  F04C29/02 ,  F04C29/026 ,  F04C2240/30 ,  Y10S418/01

摘要： A scroll type compressor has a fixed scroll member, a movable scroll member, an oil reservoir, a back-pressure chamber, an oil extraction passage, a flow passage, and a partition wall. The back-pressure chamber disposed behind the movable scroll member is in communication with a discharge chamber. The oil extraction passage having a regulating valve or a throttle connects the back-pressure chamber to the oil reservoir. The oil return passage and the flow passage connect the oil reservoir to a suction chamber, respectively. The flow passage introduces excess lubricating oil into the suction chamber when the level of lubricating oil in the oil reservoir becomes higher than a predetermined level. The partition wall disposed between the openings of the oil extraction passage for restricting lubricating oil from the oil extraction passage other than the excess lubricating oil collected in the oil reservoir from flowing to the flow passage.

摘要翻译： 涡旋式压缩机具有固定涡旋构件，可动涡旋构件，储油器，背压室，抽油通道，流路和分隔壁。 设置在动涡旋件后面的背压室与排出室连通。 具有调节阀或节气门的抽油通道将背压室连接到储油器。 回油通道和流路将储油器分别连接到吸入室。 当油箱中的润滑油水平高于预定水平时，流路将多余的润滑油引入吸入室。 所述分隔壁设置在所述抽油通道的开口之间，用于限制从所述油层中收集的过剩润滑油以外的所述除油通道的润滑油流入所述流动通道。