发明授权
- 专利标题： Enhanced interconnect structure
- 专利标题（中）： 增强的互连结构
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申请号： US11548298申请日： 2006-10-11
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公开(公告)号： US07531384B2公开(公告)日： 2009-05-12
- 发明人: Chih-Chao Yang , Mukta Ghate Farooq , Keith Kwong Hon Wong , Haining Yang
- 申请人： Chih-Chao Yang , Mukta Ghate Farooq , Keith Kwong Hon Wong , Haining Yang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 James J. Cioffi; Joseph Petrokaitis
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
The present invention provides a semiconductor interconnect structure with improved mechanical strength at the capping layer/dielectric layer/diffusion barrier interface. The interconnect structure has Cu diffusion barrier material embedded in the Cu capping material. The barrier can be either partially embedded in the cap layer or completely embedded in the capping layer.
公开/授权文献
- US20080088026A1 ENHANCED INTERCONNECT STRUCTURE 公开/授权日：2008-04-17
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