发明授权
- 专利标题： Multi-orientation semiconductor-on-insulator (SOI) substrate, and method of fabricating same
- 专利标题（中）： 多取向半导体绝缘体（SOI）基板及其制造方法
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申请号： US11276366申请日： 2006-02-27
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公开(公告)号： US07531392B2公开(公告)日： 2009-05-12
- 发明人: John J. Ellis-Monaghan , Mark D. Jaffe
- 申请人： John J. Ellis-Monaghan , Mark D. Jaffe
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Riyon Harding
- 主分类号： H01L21/84
- IPC分类号： H01L21/84
摘要：
The present invention relates to semiconductor-on-insulator (SOI) substrate structures that contain surface semiconductor regions of different crystal orientations located directly on an insulator layer. The present invention also relates to methods for fabricating such SOI substrate structures, by growing an insulator layer directly on a multi-orientation bulk semiconductor substrate that comprises surface semiconductor regions of different crystal orientations located directly on a semiconductor base layer, and removing the semiconductor base layer, thereby forming a multi-orientation SOI substrate structure that comprises surface semiconductor regions of different crystal orientations located directly on the insulator layer.
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