发明授权
- 专利标题： Semiconductor memory cell and corresponding method of producing same
- 专利标题（中）： 半导体存储单元及其相应的制造方法
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申请号： US11493252申请日： 2006-07-26
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公开(公告)号： US07531420B2公开(公告)日： 2009-05-12
- 发明人: Thomas Nirschl , Alexander Olbrich , Martin Ostermayr
- 申请人： Thomas Nirschl , Alexander Olbrich , Martin Ostermayr
- 申请人地址： DE Munich
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Munich
- 代理机构： Brinks Hofer Gilson & Lione
- 优先权： DE102004004584 20040129
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/8242
摘要：
A semiconductor memory cell and production method provides a storage capacitor connected to a selection transistor. The storage capacitor is formed as a contact hole capacitor in at least one contact hole for a source or drain region. Such a semiconductor memory cell can be produced cost-effectively and allows a high integration density.
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