Invention Grant
- Patent Title: Methods of forming self-aligned silicide layers using multiple thermal processes
- Patent Title (中): 使用多个热处理形成自对准硅化物层的方法
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Application No.: US11452042Application Date: 2006-06-13
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Publication No.: US07531459B2Publication Date: 2009-05-12
- Inventor: Sug-woo Jung , Gil-heyun Choi , Byung-hee Kim , Jong-ho Yun , Hyun-su Kim , Eun-ji Jung
- Applicant: Sug-woo Jung , Gil-heyun Choi , Byung-hee Kim , Jong-ho Yun , Hyun-su Kim , Eun-ji Jung
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2005-0050528 20050613
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
Methods of forming a metal salicide layer can include forming a metal layer on a substrate and forming a metal silicide layer on the metal layer using a first thermal process at a first temperature. Then a second process is performed, in-situ with the first thermal process, on the metal layer at a second temperature that is less than the first temperature.
Public/Granted literature
- US20060281305A1 Methods of forming self-aligned silicide layers using multiple thermal processes Public/Granted day:2006-12-14
Information query
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