发明授权
US07532322B2 Method and apparatus for measuring electron density of plasma and plasma processing apparatus
有权
用于测量等离子体和等离子体处理装置的电子密度的方法和装置
- 专利标题: Method and apparatus for measuring electron density of plasma and plasma processing apparatus
- 专利标题(中): 用于测量等离子体和等离子体处理装置的电子密度的方法和装置
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申请号: US11566340申请日: 2006-12-04
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公开(公告)号: US07532322B2公开(公告)日: 2009-05-12
- 发明人: Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
- 申请人: Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2003-119279 20030424; JP2003-123442 20030428; JP2004-009100 20040116; JP2004-117817 20040413
- 主分类号: G01J3/30
- IPC分类号: G01J3/30
摘要:
An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.
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