发明授权
- 专利标题： Semiconductor device manufacturing device
- 专利标题（中）： 半导体装置制造装置
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申请号： US11863403申请日： 2007-09-28
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公开(公告)号： US07534721B2公开(公告)日： 2009-05-19
- 发明人: Ryuichi Kanamura
- 申请人： Ryuichi Kanamura
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Sonnenschein Nath & Rosenthal LLP
- 优先权： JP2002-221069 20020730
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A process for production of a semiconductor device having a multi-layer wiring of dual damascene structure in a low-dielectric constant interlayer insulating film. The process consists of the following steps. A first insulating film and a second insulating film are formed. A first to third mask forming layers are formed. The third mask forming layer is patterned so as to form the third mask for the wiring groove pattern. A resist mask of the connecting hole pattern is formed on the second mask forming layer including the third mask. The third mask and the second and first mask forming layers are etched, and the second insulating film is etched. The second mask of the wiring groove pattern is formed by using the third mask, and the connecting hole is made to the middle of the first insulating film. The first mask forming layer is etched by using the second mask, and the first mask of the wiring groove pattern is formed, and the first insulating film remaining at the bottom of the connecting hole is etched so as to make the connecting hole. The wiring groove is formed in the second insulating film by using the first or second mask.
公开/授权文献
- US20080026563A1 SEMICONDUCTOR DEVICE MANUFACTURING DEVICE 公开/授权日：2008-01-31
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