A cross-point nonvolatile memory device using a binary metal oxide layer as a data storage material layer includes spaced apart doped lines disposed in a substrate. Spaced apart upper electrodes cross over the doped lines such that cross points are formed where the upper electrodes overlap the doped lines. Lower electrodes are disposed at the cross points between the doped lines and the upper electrodes. A binary metal oxide layer is provided between the upper electrodes and the lower electrodes and provided as a data storage material layer. Doped regions are provided between the lower electrodes and the doped lines and form diodes together with the doped lines. The doped regions have an opposite polarity to the doped lines.