Invention Grant
US07535307B2 Internal voltage generator and semiconductor memory device having the same, and method of generating internal voltage
有权
具有相同的内部电压发生器和半导体存储器件以及产生内部电压的方法
- Patent Title: Internal voltage generator and semiconductor memory device having the same, and method of generating internal voltage
- Patent Title (中): 具有相同的内部电压发生器和半导体存储器件以及产生内部电压的方法
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Application No.: US11633057Application Date: 2006-12-04
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Publication No.: US07535307B2Publication Date: 2009-05-19
- Inventor: Seong Jun Lee
- Applicant: Seong Jun Lee
- Applicant Address: KR Icheon-si, Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si, Kyoungki-do
- Agency: Lowe Hauptman Ham & Berner, LLP
- Priority: KR10-2006-0054415 20060616
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K3/01
Abstract:
An internal voltage generator includes an oscillator, a cycle control unit and a voltage generator. The oscillator periodically generates a pulse-shaped oscillation signal. The cycle control unit bypasses the oscillation signal to an output node, or selectively controls the cycle of the oscillation signal and output a controlled oscillation signal to the output node. The voltage generator generates an internal voltage in response to the oscillation signal or the controlled oscillation signal received through the output node. The cycle of the controlled oscillation signal is shorter than that of the oscillation signal. The operating speed of the voltage generator when receiving the controlled oscillation signal is faster than that of the voltage generator when receiving the oscillation signal.
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