发明授权
US07535683B2 Magnetoresistive head with improved in-stack longitudinal biasing layers
失效
具有改进的堆叠纵向偏置层的磁阻头和制造方法
- 专利标题: Magnetoresistive head with improved in-stack longitudinal biasing layers
- 专利标题(中): 具有改进的堆叠纵向偏置层的磁阻头和制造方法
-
申请号: US10977324申请日: 2004-10-29
-
公开(公告)号: US07535683B2公开(公告)日: 2009-05-19
- 发明人: Kenichi Meguro , Kouichi Nishioka , Masahiko Hatatani , Chiseki Haginoya
- 申请人: Kenichi Meguro , Kouichi Nishioka , Masahiko Hatatani , Chiseki Haginoya
- 申请人地址: NL Amsterdam
- 专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人地址: NL Amsterdam
- 代理机构: Townsend and Townsend and Crew LLP
- 代理商 Rambod Nader
- 优先权: JP2004-016126 20040123
- 主分类号: G11B5/39
- IPC分类号: G11B5/39 ; G11B5/127
摘要:
A magnetoresistive head and a fabricating method thereof accomplishing high sensitivity and low noise are provided even if track width narrowing makes progress. In one embodiment, a pinned layer includes a laminate which includes at least two magnetic layers and where adjacent magnetic layers are coupled antiferromagnetically to each other, and a mechanism to apply a longitudinal biasing field to a free layer is made to function by laminating a nonmagnetic separate layer/longitudinal biasing layer/antiferromagnetic layer connecting the free layer and opposite a nonmagnetic conductive layer (or nonmagnetic tunneling barrier layer). Controlling a magnetization direction of the longitudinal biasing layer which bears application of a longitudinal biasing field to the pinned layer and free layer is achieved by annealing carried out while applying a magnetic field in a track width direction and applying a magnetic field at room temperature.
公开/授权文献
信息查询
IPC分类: