Invention Grant
- Patent Title: Memory devices and memory systems having the same
- Patent Title (中): 具有相同的存储器件和存储器系统
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Application No.: US11902424Application Date: 2007-09-21
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Publication No.: US07535760B2Publication Date: 2009-05-19
- Inventor: Kwang-Jin Lee , Won-Seok Lee , Choong-Keun Kwak
- Applicant: Kwang-Jin Lee , Won-Seok Lee , Choong-Keun Kwak
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0095889 20060929
- Main IPC: G11C14/00
- IPC: G11C14/00

Abstract:
A non volatile memory device and a memory system having the same are disclosed. The non volatile memory device may include a memory cell array having a plurality of non volatile memory cells, a DRAM interface for exchanging data, a command and an address with an external device, a controller for selecting one of the memory cells in response to the address and performing a control operation for one of outputting data of the selected memory cell to the external device in response to the command and storing data received from the external device, and a DRAM buffer memory. The DRAM buffer memory has dynamic memory cells, and each of the dynamic memory cells has one transistor with a floating body.
Public/Granted literature
- US20080080240A1 Memory devices and memory systems having the same Public/Granted day:2008-04-03
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