发明授权
- 专利标题: Junction diode with reduced reverse current
- 专利标题(中): 具有降低的反向电流的结二极管
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申请号: US11765254申请日: 2007-06-19
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公开(公告)号: US07537968B2公开(公告)日: 2009-05-26
- 发明人: S. Brad Herner
- 申请人: S. Brad Herner
- 申请人地址: US CA Milpitas
- 专利权人: Sandisk 3D LLC
- 当前专利权人: Sandisk 3D LLC
- 当前专利权人地址: US CA Milpitas
- 代理机构: Foley & Lardner LLP
- 主分类号: H01L21/82
- IPC分类号: H01L21/82
摘要:
A method for annealing a diode formed of a silicon-germanium alloy that minimizes leakage current is disclosed. The method includes the steps of forming semiconductor pillars of an alloy of silicon and germanium; heating the pillars at a first temperature for at least 30 minutes, and then heating the pillars at a second temperature higher than the first temperature of the alloy for up to 120 seconds. The invention further includes a monolithic three dimensional memory array of a plurality of p-i-n diodes, the p-i-n diodes being formed of a silicon-germanium alloy that have been subjected to a two-stage heating process.
公开/授权文献
- US20080318397A1 Junction Diode with Reduced Reverse Current 公开/授权日:2008-12-25