Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11714195Application Date: 2007-03-06
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Publication No.: US07538005B2Publication Date: 2009-05-26
- Inventor: Kyoko Egashira , Shin Hashimoto
- Applicant: Kyoko Egashira , Shin Hashimoto
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2003-094213 20030331
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
A semiconductor device is composed of: an interconnect made of a first conductive film and a second conductive film that are stacked in sequence from the interconnect underside on an insulating film formed on a substrate; and a capacitor composed of a lower capacitor electrode made of the first conductive film, a dielectric film formed on the lower capacitor electrode, and an upper capacitor electrode made of the second conductive film and formed on the dielectric film.
Public/Granted literature
- US20070155147A1 Semiconductor device and method for fabricating the same Public/Granted day:2007-07-05
Information query
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