发明授权
- 专利标题： Two-bit memory cell having conductive charge storage segments and method for fabricating same
- 专利标题（中）： 具有导电电荷存储段的二位存储单元及其制造方法
-
申请号： US11416703申请日： 2006-05-03
-
公开(公告)号： US07538383B1公开(公告)日： 2009-05-26
- 发明人: Meng Ding , Simon S. Chan
- 申请人： Meng Ding , Simon S. Chan
- 申请人地址： US CA Sunnyvale
- 专利权人： Spansion LLC
- 当前专利权人： Spansion LLC
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Farjami & Farjami LLP
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
According to one exemplary embodiment, a two-bit memory cell includes a gate stack situated over a substrate, where the gate stack includes a charge-trapping layer. The charge-trapping layer includes first and second conductive segments and a nitride segment, where the nitride segment is situated between the first and second conductive segments. The nitride segment electrically insulates the first conductive segment from the second conductive segment. The first and second conductive segments provide respective first and second data bit storage locations in the two-bit memory cell. The gate stack can further include a lower oxide segment situated between the substrate and the charge-trapping layer. The gate stack can further include an upper oxide segment situated over the charge-trapping layer. The gate stack can be situated between a first dielectric segment and a second dielectric segment, where the first and second dielectric segments are situated over respective first and second bitlines.
信息查询
IPC分类:
