发明授权
- 专利标题： Semiconductor device, method of manufacturing the same, and method of designing the same
- 专利标题（中）： 半导体装置及其制造方法及其设计方法
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申请号： US12003983申请日： 2008-01-04
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公开(公告)号： US07541228B2公开(公告)日： 2009-06-02
- 发明人: Kiyoshi Kato , Toshihiko Saito , Atsuo Isobe , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
- 申请人： Kiyoshi Kato , Toshihiko Saito , Atsuo Isobe , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
- 申请人地址： JP Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2002-085807 20020326
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/84 ; H01L21/336 ; H01L21/8234 ; H01L21/302
摘要：
An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.