发明授权
- 专利标题： Methods of fabricating integrated circuit transistors by simultaneously removing a photoresist layer and a carbon-containing layer on different active areas
- 专利标题（中）： 通过同时去除不同有源区上的光致抗蚀剂层和含碳层来制造集成电路晶体管的方法
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申请号： US11266024申请日： 2005-11-03
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公开(公告)号： US07541234B2公开(公告)日： 2009-06-02
- 发明人: Chong Kwang Chang , Haoren Zhuang , Matthias Lipinski , Shailendra Mishra , O Sung Kwon , Tjin Tjin Tjoa , Young Gun Ko
- 申请人： Chong Kwang Chang , Haoren Zhuang , Matthias Lipinski , Shailendra Mishra , O Sung Kwon , Tjin Tjin Tjoa , Young Gun Ko
- 申请人地址： KR SG Singapore DE
- 专利权人： Samsung Electronics Co., Ltd.,Chartered Semiconductor Manufacturing Ltd.,Infineon Technologies AG
- 当前专利权人： Samsung Electronics Co., Ltd.,Chartered Semiconductor Manufacturing Ltd.,Infineon Technologies AG
- 当前专利权人地址： KR SG Singapore DE
- 代理机构： Myers Bigel Sibley & Sajovec, P.A.
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
Integrated circuit transistors may be fabricated by simultaneously removing a photoresist layer on a first active area of an integrated circuit substrate and a carbon-containing layer on a second active area of the integrated circuit substrate, to expose a nitride stress-generating layer on the second active area. A single mask may be used to define the second active area for removal of the photoresist layer on the first active area and for implanting source/drain regions into the second active area.
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