发明授权
- 专利标题: Integrated semiconductor device and method of manufacturing thereof
- 专利标题(中): 集成半导体器件及其制造方法
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申请号: US11703628申请日: 2007-02-08
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公开(公告)号: US07541248B2公开(公告)日: 2009-06-02
- 发明人: Tetsuya Nitta , Tomohide Terashima
- 申请人: Tetsuya Nitta , Tomohide Terashima
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2003-017109 20030127
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
An integrated semiconductor device containing semiconductor elements that have respective desired on-resistances and breakdown voltages achieves appropriate characteristics as a whole of the integrated semiconductor element. The integrated semiconductor device includes a plurality of semiconductor elements formed in a semiconductor layer and each having a source of an n type semiconductor, a drain of the n type semiconductor and a back gate of a p type semiconductor between the source and the drain. At least a predetermined part of the drain of one semiconductor element and a predetermined part of the drain of another semiconductor element have respective impurity concentrations different from each other.