发明授权
- 专利标题： Method for providing mixed stacked structures, with various insulating zones and/or electrically conducting zones vertically localized
- 专利标题（中）： 提供具有垂直定位的各种绝缘区和/或导电区的混合堆叠结构的方法
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申请号： US11576259申请日： 2005-10-06
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公开(公告)号： US07541263B2公开(公告)日： 2009-06-02
- 发明人: Hubert Moriceau , Christophe Morales , Marc Zussy , Jerome Dechamp
- 申请人： Hubert Moriceau , Christophe Morales , Marc Zussy , Jerome Dechamp
- 申请人地址： FR Paris
- 专利权人： Commissariat a l'Energie Atomique
- 当前专利权人： Commissariat a l'Energie Atomique
- 当前专利权人地址： FR Paris
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： FR0452283 20041006
- 国际申请： PCT/FR2005/050825 WO 20051006
- 国际公布： WO2006/037933 WO 20060413
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; H01L21/46
摘要：
The invention relates to a method for producing a semiconducting structure on a semiconducting substrate, one surface of which has a topology, this method including: a) a step for forming a first layer (24) in a first insulating material on said surface, b) a step for forming a second layer in a second insulating material (28), less dense than the first insulating material, with a thickness between 2.5 p and 3.5 p, c) a step for planarization of the assembly.
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