发明授权
US07542152B2 Method for measuring thickness of thin film, method for forming polycrystal semiconductor thin film, method for manufacturing semiconductor device, apparatus for manufacturing the same, and method for manufacturing image display device
有权
薄膜厚度测定方法，多晶半导体薄膜形成方法，半导体装置的制造方法及其制造装置以及图像显示装置的制造方法
- 专利标题： Method for measuring thickness of thin film, method for forming polycrystal semiconductor thin film, method for manufacturing semiconductor device, apparatus for manufacturing the same, and method for manufacturing image display device
- 专利标题（中）： 薄膜厚度测定方法，多晶半导体薄膜形成方法，半导体装置的制造方法及其制造装置以及图像显示装置的制造方法
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申请号： US11407905申请日： 2006-04-21
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公开(公告)号： US07542152B2公开(公告)日： 2009-06-02
- 发明人: Kazuo Takeda , Jun Gotoh , Daisuke Mutou
- 申请人： Kazuo Takeda , Jun Gotoh , Daisuke Mutou
- 申请人地址： JP Mobara
- 专利权人： Hitachi Displays, Ltd.
- 当前专利权人： Hitachi Displays, Ltd.
- 当前专利权人地址： JP Mobara
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP2005-124830 20050422
- 主分类号： G01B11/06
- IPC分类号： G01B11/06
摘要：
A laser light is projected to a thin film deposited on a transparent substrate, and measurement is performed on the entire measurement area of the substrate, and transmission intensity is measured by a transmission light intensity monitor and reflection light intensity is measured by a reflection light intensity monitor at the same points and at the same number of points on the substrate. From the value of “A=1−(R+T)” where R represents reflectivity and T is transmissivity, film thickness is measured and evaluated from the relation of the value A with film thickness. By this procedure, film thickness can be determined on 10,000 substrates or more per minute and film thickness of thin film can be measured over the entire substrate surface.
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