发明授权
- 专利标题: Semiconductor device and power conversion apparatus using the same
- 专利标题(中): 半导体装置及使用其的电力转换装置
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申请号: US11501784申请日: 2006-08-10
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公开(公告)号: US07542317B2公开(公告)日: 2009-06-02
- 发明人: Katsunori Azuma , Toshiaki Morita , Hiroshi Hozoji , Kazuhiro Suzuki , Toshiya Satoh , Osamu Otsuka
- 申请人: Katsunori Azuma , Toshiaki Morita , Hiroshi Hozoji , Kazuhiro Suzuki , Toshiya Satoh , Osamu Otsuka
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Crowell & Moring LLP
- 优先权: JP2005-245232 20050826
- 主分类号: H02M7/537
- IPC分类号: H02M7/537
摘要:
The power conversion apparatus uses the semiconductor device. Said semiconductor device includes a first group of power semiconductor elements at least one of which is electrically connected between a first potential and a third potential, a second group of power semiconductor elements at least one of which is electrically connected between a second potential and the third potential, and a third group of power semiconductor elements at least one of which is electrically connected between the first potential and the third potential. The second group is disposed between the first group and third group.Thereby, a low-loss semiconductor device having both inductance reducibility and heat generation balancing capability and also an electric power conversion apparatus using the same is provided.
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