发明授权
US07542369B2 Integrated circuit having a memory with low voltage read/write operation
有权
具有低电压读/写操作的存储器的集成电路
- 专利标题: Integrated circuit having a memory with low voltage read/write operation
- 专利标题(中): 具有低电压读/写操作的存储器的集成电路
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申请号: US11863961申请日: 2007-09-28
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公开(公告)号: US07542369B2公开(公告)日: 2009-06-02
- 发明人: Prashant U. Kenkare , Andrew C. Russell , David R. Bearden , James D. Burnett , Troy L. Cooper , Shayan Zhang
- 申请人: Prashant U. Kenkare , Andrew C. Russell , David R. Bearden , James D. Burnett , Troy L. Cooper , Shayan Zhang
- 申请人地址: US TX Austin
- 专利权人: Freescale Semiconductor, Inc.
- 当前专利权人: Freescale Semiconductor, Inc.
- 当前专利权人地址: US TX Austin
- 代理商 Daniel D. Hill
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
An integrated circuit with a low voltage read/write operation is provided. The integrated circuit may include a processor and a plurality of memory cells organized in rows and columns and coupled to the processor, wherein a row of memory cells comprises a word line and all of the memory cells coupled to the word line, and wherein a column of memory cells comprises a bit line and all of the memory cells coupled to the bit line. The integrated circuit may further include a first power supply voltage terminal for receiving a first power supply voltage, wherein the first power supply voltage is provided to power the processor, and wherein the first power supply voltage is provided to power the plurality of memory cells during a first access operation of the plurality of memory cells. The integrated circuit may further include a second power supply voltage terminal for receiving a second power supply voltage higher than the first power supply voltage, wherein the second power supply voltage is provided to power the plurality of memory cells during a second access operation of the plurality of memory cells.
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