Integrated circuit having a memory with low voltage read/write operation
    1.
    发明授权
    Integrated circuit having a memory with low voltage read/write operation 有权
    具有低电压读/写操作的存储器的集成电路

    公开(公告)号:US07292495B1

    公开(公告)日:2007-11-06

    申请号:US11427610

    申请日:2006-06-29

    IPC分类号: G11C7/00

    摘要: An integrated circuit with a low voltage read/write operation is provided. The integrated circuit may include a processor and a plurality of memory cells organized in rows and columns and coupled to the processor, wherein a row of memory cells comprises a word line and all of the memory cells coupled to the word line, and wherein a column of memory cells comprises a bit line and all of the memory cells coupled to the bit line. The integrated circuit may further include a first power supply voltage terminal for receiving a first power supply voltage, wherein the first power supply voltage is provided to power the processor, and wherein the first power supply voltage is provided to power the plurality of memory cells during a first access operation of the plurality of memory cells. The integrated circuit may further include a second power supply voltage terminal for receiving a second power supply voltage higher than the first power supply voltage, wherein the second power supply voltage is provided to power the plurality of memory cells during a second access operation of the plurality of memory cells.

    摘要翻译: 提供具有低电压读/写操作的集成电路。 集成电路可以包括处理器和以行和列组织并且耦合到处理器的多个存储单元,其中存储单元行包括字线和耦合到字线的所有存储器单元,并且其中列 的存储器单元包括位线和耦合到位线的所有存储器单元。 集成电路还可以包括用于接收第一电源电压的第一电源电压端子,其中提供第一电源电压以为处理器供电,并且其中提供第一电源电压以在多个存储器单元期间供电 多个存储单元的第一访问操作。 集成电路还可以包括用于接收高于第一电源电压的第二电源电压的第二电源电压端子,其中提供第二电源电压以在多个存储器单元的第二访问操作期间为多个存储器单元供电 的记忆细胞。

    Integrated circuit having a memory with low voltage read/write operation
    2.
    发明授权
    Integrated circuit having a memory with low voltage read/write operation 有权
    具有低电压读/写操作的存储器的集成电路

    公开(公告)号:US07542369B2

    公开(公告)日:2009-06-02

    申请号:US11863961

    申请日:2007-09-28

    IPC分类号: G11C11/00

    摘要: An integrated circuit with a low voltage read/write operation is provided. The integrated circuit may include a processor and a plurality of memory cells organized in rows and columns and coupled to the processor, wherein a row of memory cells comprises a word line and all of the memory cells coupled to the word line, and wherein a column of memory cells comprises a bit line and all of the memory cells coupled to the bit line. The integrated circuit may further include a first power supply voltage terminal for receiving a first power supply voltage, wherein the first power supply voltage is provided to power the processor, and wherein the first power supply voltage is provided to power the plurality of memory cells during a first access operation of the plurality of memory cells. The integrated circuit may further include a second power supply voltage terminal for receiving a second power supply voltage higher than the first power supply voltage, wherein the second power supply voltage is provided to power the plurality of memory cells during a second access operation of the plurality of memory cells.

    摘要翻译: 提供具有低电压读/写操作的集成电路。 集成电路可以包括处理器和以行和列组织并且耦合到处理器的多个存储单元,其中存储单元行包括字线和耦合到字线的所有存储器单元,并且其中列 的存储器单元包括位线和耦合到位线的所有存储器单元。 集成电路还可以包括用于接收第一电源电压的第一电源电压端子,其中提供第一电源电压以为处理器供电,并且其中提供第一电源电压以在多个存储器单元期间供电 多个存储单元的第一访问操作。 集成电路还可以包括用于接收高于第一电源电压的第二电源电压的第二电源电压端子,其中提供第二电源电压以在多个存储器单元的第二访问操作期间为多个存储器单元供电 的记忆细胞。

    ELECTRONIC CIRCUIT HAVING SHARED LEAKAGE CURRENT REDUCTION CIRCUITS
    3.
    发明申请
    ELECTRONIC CIRCUIT HAVING SHARED LEAKAGE CURRENT REDUCTION CIRCUITS 有权
    具有共享漏电流减少电路的电子电路

    公开(公告)号:US20120200336A1

    公开(公告)日:2012-08-09

    申请号:US13020565

    申请日:2011-02-03

    IPC分类号: H03K3/011 G05F1/10

    CPC分类号: H03K19/0008 H03K19/0016

    摘要: An electronic circuit includes a plurality of circuit blocks, a plurality of bias circuits, a switching circuit, and plurality of transistors. The plurality of circuit blocks each includes a high power terminal and a low power terminal. The switching circuit includes a plurality of switches for selectively coupling a bias circuit of the plurality of bias circuits to the low power terminal of a circuit block of the plurality of circuit blocks. Each bias circuit of the plurality of bias circuits is selectively couplable to the low power terminal of each of the plurality of circuit blocks. Each transistor of the plurality of transistors has a first current terminal coupled to a circuit ground terminal, and each transistor of the plurality of transistors has a control terminal for controlling the conductivity of the plurality of the transistors by a bias circuit of the plurality of bias circuits.

    摘要翻译: 电子电路包括多个电路块,多个偏置电路,开关电路和多个晶体管。 多个电路块各自包括高功率端子和低功率端子。 开关电路包括多个开关,用于将多个偏置电路的偏置电路选择性地耦合到多个电路块的电路块的低功率端子。 多个偏置电路的每个偏置电路可以选择性地耦合到多个电路块中的每一个的低功率端子。 多个晶体管的每个晶体管具有耦合到电路接地端子的第一电流端子,并且多个晶体管中的每个晶体管具有控制端子,用于通过多个偏置的偏置电路来控制多个晶体管的导电性 电路。

    MINIMUM MEMORY OPERATING VOLTAGE TECHNIQUE
    4.
    发明申请
    MINIMUM MEMORY OPERATING VOLTAGE TECHNIQUE 有权
    最小存储器工作电压技术

    公开(公告)号:US20080082873A1

    公开(公告)日:2008-04-03

    申请号:US11468458

    申请日:2006-08-30

    IPC分类号: G11C29/00

    摘要: A method includes an integrated circuit with a memory. The memory operates with an operating voltage. A value of a minimum operating voltage of the memory is determined. The value of the minimum operating voltage is stored in a non-volatile memory location that maybe a non-volatile register. This minimum operating voltage information can then be used in determining when an alternative power supply voltage may be switched to the memory or ensuring that the minimum voltage is otherwise met. The minimum voltage can be used only internal to the integrated circuit or also provided externally to a user.

    摘要翻译: 一种方法包括具有存储器的集成电路。 存储器工作在工作电压。 确定存储器的最小工作电压的值。 最小工作电压的值存储在可能是非易失性寄存器的非易失性存储器位置。 然后可以使用该最小工作电压信息来确定什么时候可以将替代电源电压切换到存储器或确保以其他方式满足最小电压。 最小电压只能用于集成电路内部,也可以在用户外部使用。

    Electronic circuit having shared leakage current reduction circuits
    5.
    发明授权
    Electronic circuit having shared leakage current reduction circuits 有权
    具有共享泄漏电流降低电路的电子电路

    公开(公告)号:US08710916B2

    公开(公告)日:2014-04-29

    申请号:US13020565

    申请日:2011-02-03

    IPC分类号: G05F1/10 G05F3/02

    CPC分类号: H03K19/0008 H03K19/0016

    摘要: An electronic circuit includes a plurality of circuit blocks, a plurality of bias circuits, a switching circuit, and plurality of transistors. The plurality of circuit blocks each includes a high power terminal and a low power terminal. The switching circuit includes a plurality of switches for selectively coupling a bias circuit of the plurality of bias circuits to the low power terminal of a circuit block of the plurality of circuit blocks. Each bias circuit of the plurality of bias circuits is selectively couplable to the low power terminal of each of the plurality of circuit blocks. Each transistor of the plurality of transistors has a first current terminal coupled to a circuit ground terminal, and each transistor of the plurality of transistors has a control terminal for controlling the conductivity of the plurality of the transistors by a bias circuit of the plurality of bias circuits.

    摘要翻译: 电子电路包括多个电路块,多个偏置电路,开关电路和多个晶体管。 多个电路块各自包括高功率端子和低功率端子。 开关电路包括多个开关,用于将多个偏置电路的偏置电路选择性地耦合到多个电路块的电路块的低功率端子。 多个偏置电路的每个偏置电路可以选择性地耦合到多个电路块中的每一个的低功率端子。 多个晶体管的每个晶体管具有耦合到电路接地端子的第一电流端子,并且多个晶体管中的每个晶体管具有控制端子,用于通过多个偏置的偏置电路来控制多个晶体管的导电性 电路。

    Minimum memory operating voltage technique
    6.
    发明授权
    Minimum memory operating voltage technique 有权
    最低内存工作电压技术

    公开(公告)号:US07523373B2

    公开(公告)日:2009-04-21

    申请号:US11468458

    申请日:2006-08-30

    IPC分类号: G01R31/30

    摘要: A method includes an integrated circuit with a memory. The memory operates with an operating voltage. A value of a minimum operating voltage of the memory is determined. The value of the minimum operating voltage is stored in a non-volatile memory location that maybe a non-volatile register. This minimum operating voltage information can then be used in determining when an alternative power supply voltage may be switched to the memory or ensuring that the minimum voltage is otherwise met. The minimum voltage can be used only internal to the integrated circuit or also provided externally to a user.

    摘要翻译: 一种方法包括具有存储器的集成电路。 存储器工作在工作电压。 确定存储器的最小工作电压值。 最小工作电压的值存储在可能是非易失性寄存器的非易失性存储器位置。 然后可以使用该最小工作电压信息来确定什么时候可以将替代电源电压切换到存储器或确保以其他方式满足最小电压。 最小电压只能用于集成电路内部,也可以在用户外部使用。

    Memory Management Unit Tag Memory
    7.
    发明申请
    Memory Management Unit Tag Memory 有权
    内存管理单元标签内存

    公开(公告)号:US20130046928A1

    公开(公告)日:2013-02-21

    申请号:US13213900

    申请日:2011-08-19

    IPC分类号: G06F12/02

    摘要: A method and data processing system for accessing an entry in a memory array by placing a tag memory unit (114) in parallel with an operand adder circuit (112) to enable tag lookup and generation of speculative way hit/miss information (126) directly from the operands (111, 113) without using the output sum of the operand adder. PGZ-encoded address bits (0:51) from the operands (111, 113) are applied with a carry-out value (Cout48) to a content-addressable memory array (114) to generate two speculative hit/miss signals. A sum value (EA51) computed from the least significant base and offset address bits determines which of the speculative hit/miss signals is selected for output (126).

    摘要翻译: 一种方法和数据处理系统,用于通过将标记存储器单元(114)与操作数加法器电路(112)并行放置来访问存储器阵列中的入口,以使标签查找和直接产生投机方式命中/未命中信息(126) 不使用操作数加法器的输出和从操作数(111,113)中读出。 将来自操作数(111,113)的PGZ编码的地址位(0:51)与进位值(Cout48)一起施加到内容寻址存储器阵列(114),以产生两个推测的命中/未命中信号。 从最低有效基址和偏移地址位计算的和值(EA51)确定选择哪种推测性命中/未命中信号用于输出(126)。

    System and method for memory array access with fast address decoder
    8.
    发明授权
    System and method for memory array access with fast address decoder 有权
    具有快速地址解码器的存储器阵列访问的系统和方法

    公开(公告)号:US08943292B2

    公开(公告)日:2015-01-27

    申请号:US11552817

    申请日:2006-10-25

    IPC分类号: G06F12/02 G06F9/355 G06F9/345

    CPC分类号: G06F9/355 G06F9/345

    摘要: A method includes storing a first transaction entry to a first software configurable storage location, storing a second transaction entry to a second software configurable storage location, determining that a first transaction indicated by the first transaction entry has occurred, determining that a second transaction indicated by the second transaction entry has occurred subsequent to the first transaction, and, in response to determining that the first transaction occurred and the second transaction occurred, storing at least one transaction attribute captured during at least one clock cycle subsequent to the second transaction. The first and second software configurable storage locations may be located in a trace buffer, where the at least one transaction attribute is stored to the trace buffer and overwrites the first and second transaction attributes. Each transaction entry may include a dead cycle field, a consecutive transaction requirement field, and a last entry field.

    摘要翻译: 一种方法包括将第一交易条目存储到第一软件可配置存储位置,将第二交易条目存储到第二软件可配置存储位置,确定由第一交易条目指示的第一交易已经发生,确定由第一交易条目指示的第二交易 第二交易条目已经在第一交易之后发生,并且响应于确定第一交易发生和第二交易发生,存储在第二交易之后的至少一个时钟周期期间捕获的至少一个交易属性。 第一和第二软件可配置存储位置可以位于跟踪缓冲器中,其中至少一个事务属性被存储到跟踪缓冲器并且覆盖第一和第二事务属性。 每个交易条目可以包括死循环字段,连续交易需求字段和最后输入字段。

    Pipelined tag and information array access with speculative retrieval of tag that corresponds to information access
    9.
    发明授权
    Pipelined tag and information array access with speculative retrieval of tag that corresponds to information access 有权
    流水线标签和信息数组访问,与信息访问相对应的标签的推测检索

    公开(公告)号:US07984229B2

    公开(公告)日:2011-07-19

    申请号:US11684529

    申请日:2007-03-09

    IPC分类号: G06F12/00

    CPC分类号: G06F12/0895 Y02D10/13

    摘要: A cache design is described in which corresponding accesses to tag and information arrays are phased in time, and in which tags are retrieved (typically speculatively) from a tag array without benefit of an effective address calculation subsequently used for a corresponding retrieval from an information array. In some exploitations, such a design may allow cycle times (and throughput) of a memory subsystem to more closely match demands of some processor and computation system architectures. Our techniques seek to allow early (indeed speculative) retrieval from the tag array without delays that would otherwise be associated with calculation of an effective address eventually employed for a corresponding retrieval from the information array. Speculation can be resolved using the eventually calculated effective address or using separate functionality. In some embodiments, we use calculated effective addresses for way selection based on tags retrieved from the tag array.

    摘要翻译: 描述了一种高速缓存设计,其中对标签和信息数组的相应访问在时间上是相位的,并且其中从标签数组中检索(通常是推测性地)的标签,而不受随后用于从信息数组的相应检索的有效地址计算的益处 。 在一些开发中,这样的设计可以允许存储器子系统的周期时间(和吞吐量)更接近地匹配一些处理器和计算系统架构的需求。 我们的技术旨在允许从标签数组中提前(确实是推测性的)检索,而不会延迟,否则将与从信息数组中相应检索最终采用的有效地址的计算相关联。 可以使用最终计算的有效地址或使用单独的功能来解决投机。 在一些实施例中,我们使用基于从标签阵列检索的标签的方法选择的计算的有效地址。

    Data latch with structural hold
    10.
    发明授权
    Data latch with structural hold 有权
    数据锁存结构保持

    公开(公告)号:US07843218B1

    公开(公告)日:2010-11-30

    申请号:US12607657

    申请日:2009-10-28

    IPC分类号: H03K19/173

    CPC分类号: G01R31/318541

    摘要: A multiplexed data flip-flop circuit (500) is described in which a multiplexer (510) outputs functional or scan data, a master latch (520) generates a master latch output signal at a hold time under control of a master clock signal, a slave latch (540) generates a flip flop output signal at a launch time under control of a slave clock signal, clock generation circuitry (550) generates a second clock signal that has a DC state during a functional mode and has a switching state during a scan mode, and data propagation logic circuitry (564) uses the first and second clock signals to generate the master and slave clock signals during a scan mode to delay the launch time of the slave latch with respect to the hold time of the master latch.

    摘要翻译: 描述了多路复用数据触发器电路(500),其中复用器(510)输出功能或扫描数据,主锁存器(520)在主时钟信号的控制下在保持时间产生主锁存器输出信号, 从锁存器(540)在从时钟信号的控制下在启动时产生触发器输出信号,时钟产生电路(550)产生在功能模式期间具有DC状态的第二时钟信号,并且在第一时钟信号期间具有开关状态 扫描模式和数据传播逻辑电路(564)在扫描模式期间使用第一和第二时钟信号来产生主时钟信号和从时钟信号,以相对于主锁存器的保持时间延迟从锁存器的启动时间。