发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US12042079申请日: 2008-03-04
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公开(公告)号: US07543757B2公开(公告)日: 2009-06-09
- 发明人: Hirotaka Nishizawa , Kenji Osawa , Hideo Koike , Junichiro Osako , Tamaki Wada
- 申请人: Hirotaka Nishizawa , Kenji Osawa , Hideo Koike , Junichiro Osako , Tamaki Wada
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: Miles & Stockbridge P.C.
- 主分类号: G06K19/06
- IPC分类号: G06K19/06
摘要:
A semiconductor device includes external interface terminals and processing circuits, and it is fed with an operating power source when detachably set in a host equipment. Power source feeding terminals (VCC, VSS) among the external interface terminals are long enough to keep touching the corresponding terminals of the host equipment for, at least, a predetermined time period since the separation of an extraction detecting terminal among the external interface terminals, from the corresponding terminal of the host equipment, and they are formed to be longer in the extraction direction of the semiconductor device than the extraction detecting terminal. These power source feeding terminals are a power source terminal and a ground terminal, and any power source compensating capacitor is not connected between the power source terminal and the ground terminal. Since a time period required till the cutoff of the power source can be easily ensured, a capacitor for compensating the operating power source at the power source cutoff which occurs midway of an operation is not necessitated.
公开/授权文献
- US20080149739A1 SEMICONDUCTOR DEVICE 公开/授权日:2008-06-26
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