发明授权
- 专利标题： Capacitive micromachined ultrasound transducer fabricated with epitaxial silicon membrane
- 专利标题（中）： 用外延硅膜制造的电容式微机械超声换能器
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申请号： US11393317申请日： 2006-03-30
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公开(公告)号： US07545012B2公开(公告)日： 2009-06-09
- 发明人: Lowell Scott Smith , David Martin Mills , Jeffrey Bernard Fortin , Wei-Cheng Tian , John Robert Logan
- 申请人： Lowell Scott Smith , David Martin Mills , Jeffrey Bernard Fortin , Wei-Cheng Tian , John Robert Logan
- 申请人地址： US NY Schenectady
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： US NY Schenectady
- 代理商 Fletcher Yoder
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; H01L41/02 ; H04R17/00
摘要：
A capacitive micromachined ultrasound transducer (cMUT) cell is presented. The cMUT cell includes a lower electrode. Furthermore, the cMUT cell includes a diaphragm disposed adjacent to the lower electrode such that a gap having a first gap width is formed between the diaphragm and the lower electrode, wherein the diaphragm comprises one of a first epitaxial layer or a first polysilicon layer. In addition, a stress reducing material is disposed in the first epitaxial layer.
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